A SiGe:C BiCMOS LNA for 60GHz band applications

Severino, Raffaele; Taris, Thierry; Deval, Yann; Belot, Didier; Bégueret, Jean-Baptiste

doi:10.1109/bipol.2009.5314155

Cited by 7 publications

(5 citation statements)

References 3 publications

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“…As reported in [1], 5μm×0.27μm NPN transistor achieves 2.8dB NFmin and 226GHz fTmax for a 0.8mA/μm² and a 4.4mA/μm² current density respectively. These active device features help transistor sizing in the LNA design.…”

Section: A Bicmos9mw 130nm Technologysupporting

confidence: 54%

80 GHz co-designed LNA and antenna for automotive radar

Martin

Taris

Bégueret

et al. 2014

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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Co-designed Low Noise Amplifier (LNA) and dipole antenna in a RadioFrequency (RF) dedicated silicon technology, BiCMOS9MW, are presented in this paper. The LNA is a two-stages cascode based on a SiGE:C 130nm HBT optimized for maximum gain. The antenna is a dipole designed to match the LNA input impedance and maximize radiation diagram. Both are cointegrated directly on the silicon chip. The circuit is dedicated to automotive radar applications at 80GHz. The measurement results of the co-integrated LNA exhibit a gain and NF of 26dB and 5dB respectively with a power consumption of 20mW, while the antenna shows a simulated gain of 0dB. I.978-1-4799-4242-8/14/$31.00 c 2014 IEEE

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Section: A Bicmos9mw 130nm Technologysupporting

confidence: 54%

80 GHz co-designed LNA and antenna for automotive radar

Martin

Taris

Bégueret

et al. 2014

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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“…Recent publications have shown 32, 60 and 77 GHz SiGe HBT circuits [5][6][7]. In the previous subsection, we showed that the correlation between the base and collector noise current sources could be ignored at the lower frequencies of 1 and 8 GHz.…”

Section: Noise Model Comparison At 32 and 64 Ghz For Vmentioning

confidence: 74%

“…Heterojunction bipolar transistors (HBTs) extend the advantages of homojunction bipolar transistors to significantly higher frequencies [1,2]. Several foundries have been offering SiGe HBTs with operating frequencies of 200 GHz and even beyond in BiCMOS technology (e.g., [3,4]), which are successfully being used for 32, 60 and 77 GHz circuits [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters

López-González¹,

Sakalas²,

Schröter³

2010

Semicond. Sci. Technol.

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This paper presents an analytical model for high-frequency noise of high-speed SiGe heterojunction bipolar transistors (HBTs). The model allows circuit level noise parameters to be obtained: the minimum noise figure, the noise resistance and the optimum admittance for different bias and frequencies up to 64 GHz, including the quasi-saturation effect. The noise parameters are determined directly from y-parameters. The analytical model is verified through comparison with TCAD simulation results of the noise parameters using the field impedance method as well as with measured data. The paper also reviews for 200 GHz SiGe HBTs the latest y-parameters-based analytical noise models. Their bias and frequency dependence is calculated and compared with device simulation.

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“…In particular, it realizes lower NF and consumes less chip area than the other designs listed in Table I. The LNA from [6] consumes less power (i.e., ~10mW), however, a 1.2V supply voltage for the BJT cascode stage leaves little headroom and may compromise the LNA dynamic range. ACKNOWLEDGEMENT This work was supported by the EU-MEDEA+ project SIAM (2T206).…”

Section: Measurement Resultsmentioning

confidence: 98%

“…60GHz-band BJT and CMOS LNAs reported in the recent literature (see Table I). It should be noted that LNAs with differential outputs in [6] and [8] are characterized with one output port terminated in a 50Ω load, while the LNA in this paper is measured as a 3-port (using the Agilent N5247A 4-port VNA). As shown in Table I, the LNA developed in this work compares favorably to the other LNAs in terms of input match, reverse isolation, IP -1dB and power consumption.…”

Section: Measurement Resultsmentioning

confidence: 99%

A 4dB NF 60GHz-band low-noise amplifier with balanced outputs

Jin

Long

Spirito

2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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A 60GHz-band, 2-stage low-noise amplifier with 4-6.5dB measured noise figure (50Ω) and over 9GHz bandwidth is described. Peak gain measured from single-ended input to differential outputs is 13.9dB, and input referred P -1dB and IIP 3 are -18dBm and -9.8dBm, respectively. Input return loss exceeds 10dB across 50-67GHz. Implemented in 130nm SiGeBiCMOS, the 380×240μm 2 IC consumes 6.8mA from a 2V supply. Fig. 1. LNA schematic diagram.Index Terms -Millimeter-wave low-noise amplifier (LNA), 60GHz receiver front-end, active balun.

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A SiGe:C BiCMOS LNA for 60GHz band applications

Cited by 7 publications

References 3 publications

80 GHz co-designed LNA and antenna for automotive radar

80 GHz co-designed LNA and antenna for automotive radar

Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters

A 4dB NF 60GHz-band low-noise amplifier with balanced outputs

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