A SiC Trench MOSFET concept offering improved channel mobility and high reliability

Siemieniec, Ralf; Peters, Dethard; Esteve, Romain; Bergner, W.; Kuck, Daniel; Aichinger, Thomas; Basler, Thomas; Zippelius, Bernd

doi:10.23919/epe17ecceeurope.2017.8098928

Cited by 51 publications

(19 citation statements)

References 15 publications

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“…In this work, we investigate the effect of neutron irradiation on different commercial SiC power MOSFETs produced by different manufacturers. The devices were selected with three different types of design: planar gate, trench gate and double trench, where the last has a trench gate and source [30]. The schematics of the three architectures are shown in Fig.…”

Section: Cazzaniga and M Kastriotou Are With Isis Facility Stfcmentioning

confidence: 99%

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Martinella

Alía

Stark

et al. 2021

IEEE Trans. Nucl. Sci.

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Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.

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Section: Cazzaniga and M Kastriotou Are With Isis Facility Stfcmentioning

confidence: 99%

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Martinella

Alía

Stark

et al. 2021

IEEE Trans. Nucl. Sci.

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“…It requires cleaner oxide or defects during fabrication have to be reduced [88, pages: 3-5]. [88] and [89] argue against intrinsic defects. The publication [89] determines the oxide reliability using the Weibull distribution for extrinsic defects.…”

Section: B Reliability and Safetymentioning

confidence: 99%

Discussion on Electric Power Supply Systems for All Electric Aircraft

et al. 2020

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The electric power supply system is one of the most important research areas within sustainable and energy-efficient aviation for more-and especially all electric aircraft. This paper discusses the history in electrification, current trends with a broad overview of research activities, state of the art of electrification and an initial proposal for a short-range aircraft. It gives an overview of the mission profile, electrical sources, approaches for the electrical distribution system and the required electrical loads. Current research aspects and questions are discussed, including voltage levels, semiconductor technology, topologies and reliability. Because of the importance for safety possible circuit breakers for the proposed concept are also presented and compared, leading to a initial proposal. Additionally, a very broad review of literature and a state of the art discussion of the wiring harness is given, showing that this topic comes with a high number of aspects and requirements. Finally, the conclusion sums up the most important results and gives an outlook on important future research topics. INDEX TERMS Aviation, aerospace electronics, MEA, AEA, electric power supply systems, dc-dc power converters, power semiconductor devices, wide bandgap semiconductors, high voltage direct current (HVDC), circuit breaker, hybrid circuit breaker.

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“…The process technologies that enabled the demonstration of high-performance 1.2 kV SiC MOSFETs include the post oxidation anneal in nitric oxide (NO) [1], high quality epigrowth technique [2], ion implantations at elevated temperatures [3], etc. In regards to the device architecture, many groups have been developing the trench-type MOSFET [4,5], but the planar-type MOSFET has remained mainstream since its commercialization in the early 2010s. Many novel design approaches, as well as edge termination techniques, for SiC planar MOSFETs have been attempted to improve Ron,sp, BV, switching performance, reliability, and the trade-offs between them.…”

Section: Introductionmentioning

confidence: 99%

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

Kim¹,

Yun

Jang

et al. 2021

IEEE J. Electron Devices Soc.

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A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics, and blocking behaviors. All the design rules, such as channel length, JFET width, contact openings, gate-to-source overlap, and cell pitch were investigated to clearly provide the quantitative impact on the static performances. 2D-simulation was also conducted to support experimental results. As a result, it turned out that the channel length is the most determining factor for the specific on-resistance, resulting in 0.364 mΩ-cm 2 increase per 0.1 μm increase in the channel length. However, the channel potential is also largely dependent on the channel length such that the leakage current tends to increase with short channel design. The enhanced doping in the JFET region with a current spreading layer (CSL) is essential for achieving a narrower JFET width, which satisfies all static performances, as well as device reliability and ruggedness. Methods to further improve the trade-off characteristics using other design aspects are discussed in this paper.

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A SiC Trench MOSFET concept offering improved channel mobility and high reliability

Cited by 51 publications

References 15 publications

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Discussion on Electric Power Supply Systems for All Electric Aircraft

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

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