A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<

Abstract

We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J-V), capacitance (C-V) and conductance (G-V) measurements. The technique relies on the concept of sensitivity maps (SM), that identify the band-gap regions where defects affect those electrical characteristics. The information provided by SMs are used to reproduce J-V, C-V and G-V data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carriers-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal-insulator-metal structures of different composition for DRAM capacitor applications. The origin of the observed voltage, temperature and frequency dependencies of the I-V, C-V and G-V data is understood and the atomic structure of the relevant stack defects is identified.

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

“…The defects are gradually deactivated as the temperature decreases and the capture and emission times become larger. So at lower temperatures, the measured capacitance (and therefore permittivity κ) is closer to the real permittivity of the ALD oxide layer [31].…”

“…In ALD-grown oxides, charge trapping in defects leads to an additional, temperature-dependent capacitance signal [31]. The defects are gradually deactivated as the temperature decreases and the capture and emission times become larger.…”

“…However, in ALD-grown high-κ layers such as STO, oxygen vacancies have been shown to impact the dielectric properties (such as permittivity) of the layer [31], and can contribute to the conductivity if they are mobile [32,33]. Large modulations of the magnetic anisotropy energy have been achieved using oxygen ion migration in high-κ GdO x , with a strength up to 11.6 pJ/Vm [34][35][36].…”

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

“…The WF of a metal on high-k is determined by extracting V FB from capacitance-voltage (CV) measurements on a metal-insulator-semiconductor (MIS) structure [22]. The schematic in Figure 2 shows the energy band diagram of an MIS structure.…”

Polarons as a universal source of leakage currents in amorphous oxides: a multiscale modeling approach

“…The experimental data is taken from Ref. [24] with k e,i,gate and k e,ij being the charge emission rates of defect i into the gate and into a different defect j respectively. The defect occupancies f i obey a set of Master equations given by…”