A Semianalytical Method to Determine Parasitic Elements of Quantum-Well Laser

Gao, Jianjun; Li, Xiuping

doi:10.1109/jlt.2007.904031

Cited by 12 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The complete laser diode small signal equivalent circuit model under the above-threshold biased condition is shown in Figure 7 [13,14] . The typical parasitic network model includes a pad capacitance C p , a series inductance L p representing the feedline, a shunting capacitance C S representing the contact capacitance, a series resistance R S representing the contact resistance and Bragg mirror stacks, and Z in representing the input impedance of the To calculate the normalized small signal modulation response of the laser, we must take into account both the photo response and the effect of the parasitic elements.…”

Section: Parameter Exaction Methodsmentioning

confidence: 99%

High frequency modeling for quantum-well laser diodes

Gao

2009

Chin. Sci. Bull.

Self Cite

View full text Add to dashboard Cite

Citation: Gao J J. High frequency modeling for quantum-well laser diodes.High frequency modeling of quantum-well (QW) laser diodes for optoelectronic integrated circuit (OEIC) design is discussed in this paper. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and high frequency. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are analyzed to obtain a physics-based high frequency model. The model is based on the physical rate equations, and is versatile in that it permits both small-and large-signal simulations to be performed. Several procedures of the high frequency model parameter extraction are also discussed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers.laser diode, quantum well, modeling, high frequency, small signal, large signal Since the success of injection type semiconductor lasers (laser diodes, LDs) in 1963, the feasibility study of using them as light sources for low-loss optical fiber communications has been a very important topic. Solid-state devices have become very reliable and taken the place of vacuum tubes in the microwave field. Actually, the most attractive feature of LDs is the easy modulation of light intensity only by varying the injection current, the so-called direct modulation. Conventional light-intensity modulators required high voltage and this resulted in high drive power or low modulation speed.The high-speed modulation potential of the semiconductor quantum-well (QW) lasers makes them promising candidates for high-bit-rate lightwave communication system. Semiconductor quantum-well lasers have low threshold current, high intrinsic modulation bandwidth, narrow linewidth, and large photon gain, and are important light sources for high-bit-rate lightwave communication system. A detailed analysis of the microwave operating characteristics of semiconductor lasers is crucial to the design of high-speed optical links.As we know, the electrical equivalent-circuit models for optical components are useful as they allow the existing, well-developed circuit simulators to be used in the design and analysis of optoelectronic circuits. A SPICE simulator was used to solve the equations because of its possibility of integrating with electrical components (laser driver, package parasitic, etc.).Traditionally, the microwave modulation response of the laser diodes was determined using a direct solution of the rate equations. This method of analysis has several disadvantages: It requires specialized software, it is not suitable for the inclusion of package parasitic, and device-circuit interactions are not easily taken into account. An alternative approach is to transform rate equations to equivalent circuit models including the electronic part and optical part. The corresponding dc, smallsignal, and large-sign...

show abstract

Section: Parameter Exaction Methodsmentioning

confidence: 99%

High frequency modeling for quantum-well laser diodes

Gao

2009

Chin. Sci. Bull.

Self Cite

View full text Add to dashboard Cite

show abstract

“…With the appearance of various kinds of semiconductor lasers, different equivalent circuit models have also been developed [18][19][20][21][22][23] . Besides the equivalent circuit model of laser chip, we hope to establish an equivalent circuit model including test fixtures and packaging components.…”

Section: Intrinsic Response Extraction and Equivalent Circuit Modelingmentioning

confidence: 99%

Overall optimization of high-speed semiconductor laser modules

et al. 2009

View full text Add to dashboard Cite

Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.optimization design, intrinsic response, equivalent circuits, semiconductor laser, optoelectronicTo satisfy the increasing demand of developing optical communication networks from 2.5 Gb/s to 10 Gb/s, and even to 40 Gb/s, high-speed optoelectronic devices such as directly modulated lasers, electro-absorption modulators and photodiodes have been steadily pushed to higher bandwidth and performance. It was generally considered in the past that the key factor to improve the frequency response of these devices was the design and manufacture of the chip rather than the packaging process. However, with the increasing rate of optical communication, the effects of the packaging parasitics has become more and more important and can not be neglected.In recent years, several kinds of packages such as TO, butterfly, mini-DIL, and other specially designed packages have been used for high-speed optoelectronic devices [16] . Microwave design is a key issue for packaging high-speed devices, and it might be quite different in various cases, such as structures of laser diodes, types of packages and application conditions. Therefore, many kinds of packaging designs and techniques have been developed [710] . Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization design for packaging high-speed semiconductor laser module is presented in this paper,

show abstract

“…An accurate model parameter extraction technique of UTC‐PD is important for understanding of the device physical mechanisms and improving the device performances . Development of the equivalent circuit models of UTC‐PDs is also essential as it allows the existing well‐developed circuit simulation software to be utilized in the design and analysis of optoelectronic circuits . For high‐photocurrent and high‐speed photodiodes, various modeling methods, such as physics‐driven modeling, analytical modeling, empirical modeling and equivalent circuit modeling, have been investigated (especially for PIN‐PDs).…”

Section: Introductionmentioning

confidence: 99%

“…Numerical optimization techniques are usually used to determine the optimal values of model parameters . However, the accuracy of the optimization methods can vary largely up to the optimization method used and the initial values of model parameters selected . Nonphysical and nonunique results of the extracted parameter could be generated.…”

Section: Introductionmentioning

confidence: 99%

“…It is obtained by using optimization method. The results obtained from analytical method are taken as an initial value for the subsequent fitting and optimization procedure, leading to the final results of all the parameters of the equivalent circuit model . The semi‐analytical method combines the advantages of the analytical and numerical optimization methods, to enable the extracted results more accurate.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength

Meng

Wang

Liu

et al. 2016

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

We demonstrate a semi‐analytical parameter extraction method to characterize high‐speed and high‐photocurrent InP‐based uni‐traveling‐carrier photodiodes with dipole‐doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2156–2162, 2016

show abstract

A Semianalytical Method to Determine Parasitic Elements of Quantum-Well Laser

Cited by 12 publications

References 10 publications

High frequency modeling for quantum-well laser diodes

High frequency modeling for quantum-well laser diodes

Overall optimization of high-speed semiconductor laser modules

Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength

Contact Info

Product

Resources

About