A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Michielis, M. De; Esseni, D.; Tsang, Y.L.; Palestri, Pierpaolo; Selmi, L.; O'Neill, AG; Chattopadhyay, Sanatan

doi:10.1109/ted.2007.902873

Cited by 41 publications

(28 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, experimental results are often modeled or interpreted in terms of an effective mass, even in the case of holes. An intermediate approach, valid for holes in inversion layers, was developed in 9 where results obtained from a k · p model were fitted by using a semi-analytical approximation: subband levels were obtained using fitted quantization masses and the non-parabolic in-plane behavior was fitted along three different directions.…”

Section: Introductionmentioning

confidence: 99%

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Donetti

Gamiz

Thomas

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

We explore the possibility to define an effective mass parameter to describe hole transport in inversion layers in bulk MOSFETs and silicon-on-insulator devices. To do so, we employ an accurate and computationally efficient self-consistent simulator based on the six-band k·p model. The valence band structure is computed for different substrate orientations and silicon layer thicknesses and is then characterized through the calculation of different effective masses taking account of the channel direction. The effective masses for quantization and density of states are extracted from the computed energy levels and subband populations, respectively. For the transport mass, a weighted averaging procedure is introduced and justified by comparing the results with hole mobility from experiments and simulations.

show abstract

Section: Introductionmentioning

confidence: 99%

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Donetti

Gamiz

Thomas

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In Ref. [32] the authors employed a fitted effective mass in order to obtain the energy levels corresponding to k = 0, and then fitted the energy dispersion relation in the k plane for the three types of holes (obtained with the k · p method for a triangular well) using an analytic expression.…”

Section: Hole Transport In Ultrathin Dgsoi Transistorsmentioning

confidence: 99%

Monte Carlo simulation of nanoelectronic devices

et al. 2009

View full text Add to dashboard Cite

The Monte Carlo simulation method is used to analyze the behavior of electron and hole mobility in different nanoelectronic devices including double gate transistors and FinFETs. The impact of technological parameters on carrier mobility is broadly discussed, and its behavior physically explained. Our main goal is to show how mobility in multiple gate devices compares to that in single gate devices and to study different approaches to improve the performance of these devices. Simulations of ultrashort channel devices taking into account quantum effects are also shown.

show abstract

“…The properties of (1) are practically very convenient for the development of a MSMC simulator for p-MOSFETs. Recently a semi-analytical energy model for the hole inversion layers has been developed which satisfies (1) [49]. Such a model is non-parabolic and anisotropic and it has been calibrated for (001) unstrained and uniaxially strained inversion p-MOSFETs by using the k · p method as a reference model [18,49].…”

Section: Hole Inversion Layersmentioning

confidence: 99%

“…Recently a semi-analytical energy model for the hole inversion layers has been developed which satisfies (1) [49]. Such a model is non-parabolic and anisotropic and it has been calibrated for (001) unstrained and uniaxially strained inversion p-MOSFETs by using the k · p method as a reference model [18,49]. The properties of such a model made it suitable for an efficient implementation of a MSMC for p-MOS transistors [38,50].…”

Section: Hole Inversion Layersmentioning

confidence: 99%

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

et al. 2009

Self Cite

View full text Add to dashboard Cite

This paper reviews the basic methodologies and models used in the semi-classical modelling of CMOS transistors in the framework of the nowadays generalized scaling scenario. The capabilities to describe devices with arbitrary crystal orientations and strain configurations are discussed. Several simulation results are illustrated and compared to the experiments to assess the understanding of the underlying physics and the predictive capabilities of the models. A case study concerning the drain currents in nano-scale uniaxially strained MOSFETs is presented and it shows how the strain engineering may change the traditional on-current disadvantage of the p-MOS compared to the n-MOS transistors.

show abstract

A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Cited by 41 publications

References 50 publications

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Monte Carlo simulation of nanoelectronic devices

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

Contact Info

Product

Resources

About