A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

Liu, Chunsen; Yan, Xiaohong; Song, Xiongfei; Ding, Shi‐Jin; Zhang, David Wei; Zhou, Peng

doi:10.1038/s41565-018-0102-6

Cited by 347 publications

(309 citation statements)

References 42 publications

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“…Due to the diversity of energy band configurations, 2D van der Waals heterostructure has great potential to form multifunctional devices including memories and logic devices . Recently, a high program/erase ratio of ≈10 9 nonvolatile memory was realized by stacking graphene/h‐BN/MoS 2 /MoTe 2 .…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Xiong

Kang

et al. 2020

Adv Funct Materials

110

105

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Nonvolatile logic devices have attracted intensive research attentions recently for energy efficiency computing, where data computing and storage can be realized in the same device structure. Various approaches have been adopted to build such devices; however, the functionality and versatility are still very limited. Here, 2D van der Waals heterostructures based on direct bandgap materials black phosphorus and rhenium disulfide for the nonvolatile ternary logic operations is demonstrated for the first time with the ultrathin oxide layer from the black phosphorus serving as the charge trapping as well as band‐to‐band tunneling layer. Furthermore, an artificial electronic synapse based on this heterostructure is demonstrated to mimic trilingual synaptic response by changing the input base voltage. Besides, artificial neural network simulation based on the electronic synaptic arrays using the handwritten digits data sets demonstrates a high recognition accuracy of 91.3%. This work provides a path toward realizing multifunctional nonvolatile logic‐in‐memory applications based on novel 2D heterostructures.

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Section: Introductionmentioning

confidence: 99%

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Xiong

Kang

et al. 2020

Adv Funct Materials

110

105

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Section: Charge‐transport Memories Based On Two‐dimensional Materialsmentioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

Self Cite

200

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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“…[59] In addition, Intel had been largely a logic chip company since it abandoned its DRAM business in the 1970s, so this news was a sort of hint that Intel has regained its interest in the memory business. [1,61] A more precise application of Intel's 3D XPoint device, however, produced with the product name "Optane", is closer to a solid-state drive (SSD), which has been in the domain of V-NAND. The total semiconductor device market size was ≈USD300-350 billion in the 2000-2010s, but it recently grew to over USD400 billion, mainly driven by the abrupt increase in the DRAM and NAND flash market sizes.…”

Section: D-integrated Pcram-3d Xpointmentioning

confidence: 99%

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Yoon

Kim

Hwang

2019

Adv Elect Materials

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The NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower power consumption compared with the magnetic hard‐disc drives. Nonetheless, there will certainly be an upper limit for the number of stacked layers, which will be the point at which further memory density increase will stop. While V‐NAND is a supreme outcome of semiconductor memory technologies, it still relies on conventional Si‐based materials. The newly explored memory materials and concepts, such as the resistance‐based memories, can therefore be an appealing contender to or successor of V‐NAND. In this review, the current state of V‐NAND is first briefly looked into, and then the eventual limitation of memory density increase and performance boost are discussed. Most importantly, the possible strategies of integrating the resistance‐based memories into the vertical architecture are then discussed. Finally, the outlook for such resistance‐based vertical memories is presented.

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A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

Cited by 347 publications

References 42 publications

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Memory materials and devices: From concept to application

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

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