A self-powered solar-blind photodetector with largeV_ocenhancing performance based on the PEDOT:PSS/Ga₂O₃organic–inorganic hybrid heterojunction

Abstract

A self-powered solar-blind photodetector with large Voc enhancing performance is constructed on the PEDOT:PSS/Ga2O3 hybrid heterojunction.

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

“…Therefore, less carriers can be captured by the defects in [31], resulting in the shorter rise time and decay time. Furthermore, the overshooting feature can be observed from the shapes of photoresponse curves with a wedgy head at the lower P light of 150 μW/cm 2 than that occurred at the P light of 600 μW/cm 2 in [30] for the effective collection of photogenerated carriers under the reverse bias of − 1.2 V rather than 0 V. Figure 6 depicts the responsivity characteristics versus the illumination optical λ under the V bias of − 1.2 V. The maximum responsivity R max of 0.62 A/W is achieved at a λ of 244 nm and the corresponding external quantum efficiency(EQE) of 3.16 × 10 2 % calculated by the expression EQE = hcR max /(eλ), much higher than that obtained in [30,38] for the effective collection of photogenerated carriers, where R max is the peak responsivity, and h is the Plank constant. e and λ are the electronic charge and the illumination wavelength, respectively.…”

“…4a, indicating a lower noise characteristic. While under the normal incidence of 254 nm wavelength with the photodensity of 150 μW/cm 2 , the photocurrent I photo reaches 112 nA@V bias = − 4 V. In addition, the photodetector shows a weak photovoltaic effect with a photocurrent of 0.45 nA at 0 V and an open-circuit voltage (V oc ) of 0.15 V, much less than 0.9 V in reference [38], which may be attributed to the carrier density difference and the resulting Fermi level variation. Figure 4b represents the linear I photo versus V bias at various P light .…”

Study on Performance Improvements in Perovskite-Based Ultraviolet Sensors Prepared Using Toluene Antisolvent and CH3NH3Cl

“…The EQE, another determinant of sensor performance, is defined as the number of electrons generated per incident photon [ 33 , 34 , 35 ], as follows: EQE = Rhc / e λ, where h is Planck’s constant, c is the speed of light, and λ is the wavelength of the incident light. At 2 V, EQEs were 9.77% and 17.84% for the bare and antisolvent-processed MAPbBr 3 , and 19.13%, 22.32%, 18.55% and 16.76% for MAPbBr 3 with 0.05, 0.10, 0.15 and 0.20 M of added MACl, respectively.…”

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga2O3/muscovite heteroepitaxy

“… Material structure Device structure Growth technique (Ga 2 O 3 ) T Growth (°C) I dark (A) I photo (A) P opt (μW/cm 2 ), wavelength Flexible Refs. PEDOT:PSS /Ga 2 O 3 p–n MOCVD 860 ~ 0.1 p ~ 4 n 1000, 254 nm No 55 PEDOT:PSS /Ga 2 O 3 nanowire p–n CVD 1120 < 0.1 p – –, 245 nm No 56 Spiro-MeOTAD/Ga 2 O 3 p–n MOCVD 860 75 f. 12 n 80, 254 nm No 57 ZnO/Ga 2 O 3 microwire n–n CVD 1200 ~ 1.0 p ~ 5.0 n 1670, 251 nm No 58 SiO 2 /Ga 2 O 3 MOS MOCVD 735 ~ 2 f. ~ 0.2 n 30, 254 nm No 59 ...…”