A WLAN CMOS power amplifier with insensitive bias circuits

Abstract

A CMOS power amplifier (PA) for IEEE 802.11b/g/n/ac applications is presented, which is implemented with a 0.13-mm standard RF CMOS process. Integrated bias circuits for the common source (CS) and common gate (CG) power transistors are proposed, which reduce the performance sensitivities of the PA according to the variations of the bias voltage and output power. Measurements show that the proposed power amplifier achieves 17.2 dBm output power with 8.1% PAE at 234 dB EVM with MCS8, 256QAM, 40 MHz, 802.11ac signal source.ABSTRACT: This article proposes a compact wide bandwidth band pass filter (BPF) with a stepped impedance resonator (SIR) and an S-shaped coupled spiral resonator. The SIR has a wide bandwidth while the Sshaped coupled line has a compact structure due to the spiral type resonator. The BPF used the S-shaped folded structure instead of the k g /4 transmission line to reduce the size and to enhance the performance of the BPF. The via-hole was not used in order to keep the design simple. Due to the narrow coupling gap, the bandwidth of conventional BPFs can barely exceed 40%. However, in this work, the proposed BPF achieved a bandwidth of 68%, which is larger than the conventional filter. The experimental results in terms of insertion loss (S 21 ) and return loss (S 11 ) are 0.61 dB and 15.7 dB at 5.3 GHz. The smaller size of the BPF is suitable for microwave communication systems.

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

“…Demand for fully‐integrated transceivers including a RF power amplifier for WLAN solutions has recently increased in efforts to realize low‐cost system solutions . Accordingly, fully‐integrated RF front‐ends including RF power amplifiers for WLAN applications are considered an essential technology.…”