A review on the electroluminescence properties of quantum-dot light-emitting diodes

Synthesis and structure design of I–III–VI quantum dots for white light-emitting diodes

“…Therefore, the non-radiative recombination caused by Auger recombination (AR) and Fo ¨rster resonant energy transfer (FRET) will seriously affect the photoelectric performance of EL devices. [88][89][90] The formation of an alloyed or compositionally graded intermediate layer at the core-shell interface has been proven to be useful to suppress that process. 91 Beyond that, the shell thickness of QDs shows a great effect on device efficiency.…”

An efficient organic and inorganic hybrid interlayer for high performance inverted red cadmium-free quantum dot light-emitting diodes

“…Quantum dot light-emitting diodes (QLEDs) have rapidly gained tremendous attention in the development of solid-state lighting and future display applications due to their many benecial properties such as high transparency, high color purity, high stability, and exibility. [1][2][3][4][5][6] Many researchers have been focusing on improving cadmium-free QLED device performance. One of the reasons for such poor performances is that the electron and hole injection imbalance in the quantum dot (QD) emissive layer (EML) causes quenching.…”

Recent advances in efficient emissive materials-based OLED applications: a review

“…Inorganic quantum dot materials are extensively used in the light-emitting diode due to their prominent physiochemical properties such as mechanical and thermal stability, narrow emission band gap (narrow FWHM in the 30-40 nm range), excellent photoluminescence (PL) quantum yield, tunable emission spectra, good color purity, and high electrical conductivity. CdS, CdSe, PbS, and PbSe are the most frequently used materials for quantum-dot light-emitting materials (QDLED) [38].…”