2022
DOI: 10.1039/d1qm01452h
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Synthesis and structure design of I–III–VI quantum dots for white light-emitting diodes

Abstract: Quantum-dot-based light-emitting diodes (LEDs) have been considered as promising alternatives to the traditional light sources due to their photo- and thermal-stability, emission wavelength tunability, and so forth. From the past...

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Cited by 27 publications
(16 citation statements)
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References 101 publications
(97 reference statements)
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“…Donor–acceptor pair (DAP) recombination and free‐to‐bound (FTB) recombination are the most widely accepted mechanistic explanations. [ 40 ] In the DAP recombination, a delocalized donor electron recombines with a hole localized at the acceptor level. This is due to the high mobility of Cu and Ag and crystal defects caused by the high tolerance of ternary MCQDs for non‐stoichiometry.…”
Section: Properties and Synthesis Of Mcqdsmentioning
confidence: 99%
“…Donor–acceptor pair (DAP) recombination and free‐to‐bound (FTB) recombination are the most widely accepted mechanistic explanations. [ 40 ] In the DAP recombination, a delocalized donor electron recombines with a hole localized at the acceptor level. This is due to the high mobility of Cu and Ag and crystal defects caused by the high tolerance of ternary MCQDs for non‐stoichiometry.…”
Section: Properties and Synthesis Of Mcqdsmentioning
confidence: 99%
“…QDs composed of multinary I–III–VI 2 semiconductors, represented by AgInS 2 and CuInS 2 , have also been expected for possible applications in various photofunctional devices. Multinary semiconductor QDs provide several advantages over binary semiconductor QDs, including a wide selection of composition that is useful for bandgap tuning. For example, the PL of AgInS 2 QDs can be shifted in the visible and near-infrared wavelength regions by mixing with ZnS or by substituting Ag with Cu, In with Ga, and S with Se. ,, In terms of color purity, I–III–VI 2 QDs exhibit a much broader emission FWHM (100–200 nm) than II–VI (20–30 nm) and III–V (35–60 nm) QDs because their emission originates from lattice defects. QD-LEDs with I–III–VI2 QDs have been reported to show broad EL spectra derived from the QDs. Although, in some cases, these broad spectra were applied to white emission, they are still not suitable for applications requiring high color purity.…”
Section: Introductionmentioning
confidence: 99%
“…White-light-emitting diodes (WLEDs) are regarded as the fourth generation of light source due to their high luminous efficiency, long lifetime, and other advantages. The existing commercial WLEDs mainly use blue InGaN chips in combination with yellow YAG:Ce phosphors to realize white light. However, the WLEDs obtained by this method have elicited questions, including a low color rendering index (CRI) and a blue-light hazard. There is a desire to develop full-spectrum WLEDs. Quantum dots (QDs) are good candidates to fabricate full-spectrum WLEDs due to their tunable photoluminescence (PL) emission, lower energy cost, and high PL quantum yield (QY). QDs-based WLEDs with high CRI have been successfully fabricated by packaging different-colored QDs with light-emitting-diode (LED) chips. For example, red and green ZnCdTeS QDs were packaged with a blue LED chip to prepare a high-quality WLED with a CRI of 91 .…”
Section: Introductionmentioning
confidence: 99%