Quantum dots (QDs), which have high color purity, are
expected
to be applied as emitting materials to wide-color-gamut displays.
To enable their use as an alternative to Cd-based QDs, it is necessary
to improve the properties of QDs composed of low-toxicity materials.
Although multielement QDs such as Ag–In–Ga–S
are prone to spectrally broad emission from defect sites, a core/shell
structure covered with a GaS
x
shell is
expected to enable sharp emission from band-edge transitions. Here,
QD light-emitting diodes (QD-LEDs) embedded with Ag–In–Ga–S/GaS
x
core/shell QDs (AIGS QDs) were fabricated,
and their electroluminescence (EL) was observed. The EL spectra from
the AIGS QD-LEDs were found to contain a large defect-related emission
component not observed in the photoluminescence (PL) spectra of the
AIGS QD films. This defect-related emission was caused by electrons
injected into defect sites in the QDs. Therefore, the AIGS QDs and
the electron injection layer (EIL) of ZnMgO were treated with Ga compounds
such as gallium chloride (GaCl3) and gallium tris(N,N′-diethyldithiocarbamate)
(Ga(DDTC)3) to improve the luminescence properties of the
QD-LEDs. The added Ga compounds effectively compensated for defect
sites on the surface of the QDs and suppressed direct electron injection
from the EIL into defect sites. As a result, the defect-related emission
components in the EL were successfully suppressed, and the EL exhibited
a color purity comparable to the PL of the AIGS QD films. The QD-LEDs
exhibited EL spectra with a full width at half-maximum of 33 nm, which
is extremely sharp for a low-toxicity QD, and the chromaticity coordinates
(0.260, 0.695) for green EL were achieved.