A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers

Zhao, Shuang; Zhao, Xingchen; Wei, Yuqi; Zhao, Yue; Mantooth, H. Alan

doi:10.1109/jestpe.2020.3008344

Cited by 90 publications

(19 citation statements)

References 101 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In terms of crosstalk suppressing, it was recommended that a combination of additional capacitors, variable voltage/resistance driver, and auxiliary discharging path could be used. In [ 78 ], slew rate control methods for SiC MOSFET active gate drivers were reviewed (2020). Reviewed aspects included the principle of slew rate control, factors that influenced slew rate, and issues induced by high slew rate.…”

Section: Review On Sic Mosfet Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

View full text Add to dashboard Cite

Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

show abstract

Section: Review On Sic Mosfet Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

View full text Add to dashboard Cite

show abstract

“…In (12), Š FF• m m = , B 0• m m = are the reverse recovery charge and test current levels from the device datasheet, respectively. Similarly, B ~~• m m = , ?…”

Section: Appendix IIImentioning

confidence: 99%

“…The STC scheme in Figure 1 uses such an active gate drive. Active gate circuits were first used to dynamically adjust the turn-on/turn-off transition of slower transition IGBTs [2], [11], [12] for the series connection of such devices. It helped replace the conventional voltage-sharing snubbers, as well as reduce switching losses while maintaining admissible voltage/current stresses of the devices.…”

Section: Introductionmentioning

confidence: 99%

“…It helped replace the conventional voltage-sharing snubbers, as well as reduce switching losses while maintaining admissible voltage/current stresses of the devices. References [12]- [17] extend the use of active gate drive circuits for WBG SiC MOSFET applications. The literature [13], [15] propose switched resistor-based gate drive modulation to improve the current and voltage transitions of SiC PSDs and achieve controllability and performance optimization in terms of EMI and switching losses.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Switching Transition Control to Improve Efficiency of a DC/DC Power Electronic System

Chatterjee

Mazumder

2021

IEEE Access

View full text Add to dashboard Cite

Increasing the switching frequency of the power semiconductor devices (PSDs) reduces the size and cost of the passive elements, thereby positively affecting the power density of a high-frequency (HF) power electronic system (PES). To achieve a higher switching frequency of a PES, yet low switching losses, the speed of switching transitions of PSDs need to be increased. However, such fast transitions adversely affect PES performance in terms of electromagnetic interference (EMI) and device stress. Hence, a switching transition control (STC) scheme is developed to create optimality between switching PSDs with higher transitions yet maintaining safe levels of parasitic oscillations, that result from reducing the transition time of these devices. The switching transition control (STC) framework helps the HF PES achieve a target efficiency improvement by controlling the high di/dt and dv/dt regions of a PSD on the fly. Results are shown to validate that this improvement of efficiency is not feasible with a passive gate drive. An HF Ćuk PES using a Cree SiC MOSFET half-bridge module is fabricated for the testing purpose of the STC framework. The STC network is based on a simple switched resistor network, synthesized using high-speed GaN-FETs and built across two generations, Gen-1, and Gen-2. Practical operational issues of the STC network with fast switching GaN-FET in the Gen-1 board are analyzed and are overcome with design modification in Gen-2. The work has ramifications in meeting a system-level goal of an HF WBG PES, like a target efficiency increment, while not deteriorating the EMI performance and PSD stress levels that result due to parasitic oscillations in such PES.INDEX TERMS Switching transition control (STC), PSD, EMI, half-bridge, GaN FET, target efficiency.

show abstract

“…Addressing the EMI topic from the perspective of adjusting the semiconductor switching process, there is the consent that increasing the slopes of a switching process and the occurrence of oscillations in the switching waveforms deteriorate the EMI [2][3][4][5]. In the literature, there are mainly two different approaches to investigate several effects on the EMI.…”

Section: Introductionmentioning

confidence: 99%

SiC MOSFET switching – Lower losses without increased EMI – A technique to evaluate and achieve this goal

Maier

Bakran

2021

The Journal of Engineering

View full text Add to dashboard Cite

With increasing switching speed of new power semiconductors like the SiC MOSFET, special attention has to be paid on the electromagnetic interference and its limitations. In this work, an evaluation criterion is developed as an optimisation tool for maximum exploitation of conducted electromagnetic interference limit by optimizing the switching process of a SiC MOSFET. The switching losses of power semiconductors can be reduced by increasing their switching speed. Unfortunately, at the same time, the electromagnetic interference will increase due to higher voltage and current slopes and higher switching oscillations. The electromagnetic interference caused by the switching process can be reduced by decreasing the switching speed. This also reduces the switching oscillation but inevitably increases the switching losses. The electromagnetic interference criterion developed in this paper will help to identify the proper switching speed for minimum losses under compliance with switching process related electromagnetic interference. It can be used to evaluate the benefit of more advanced gate control methods that allow increasing the switching speed without increasing the switching oscillation amplitude. The proposed method will not replace the final electromagnetic interference testing, but it will help determine the proper gate control method for lowest possible switching losses without violating the electromagnetic interference restrictions in an early development state. Measurements show that the switching losses can be reduced by 75% with a proper gate control method, where the proposed method assures the compliance with the electromagnetic interference limit.

show abstract

A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers

Cited by 90 publications

References 101 publications

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Switching Transition Control to Improve Efficiency of a DC/DC Power Electronic System

SiC MOSFET switching – Lower losses without increased EMI – A technique to evaluate and achieve this goal

Contact Info

Product

Resources

About