A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Abstract

This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

Wide-Field Magnetic Field and Temperature Imaging Using Nanoscale Quantum Sensors

“…The resulting temperature profile is obtained simultaneously. Significant temperature rise is localized around the gate, which agrees with previous experimental observations 8,[16][17][18] . Particularly, attributed to the high spatial resolution and wide-field nature of Q-CAT imaging, a sharp temperature drop is well-resolved at the end of the gate along the channel direction ( Fig.5d-e), indicating limited leakage current at the channel's end.…”

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

“…Due to its superior spatial resolution of ≈1 µm compared to ≈5 µm for infrared (IR) thermometry, micro-Raman thermometry is one of the most popular techniques for measuring local temperature rise in GaN HEMTs. [8][9][10] While the earliest reports of micro-Raman thermometry equated the shift in the Stokes peak positions with the temperature rise alone, subsequent studies have highlighted the importance of accounting for inverse piezoelectric (IPE) 11 and thermoelastic stresses 12 and have demonstrated the ability to simultaneously measure the temperature rise and thermoelastic stress in the ON state. 13,14 Yet, for several years, significant discrepancies have existed in the sign and order of magnitude of the IPE stress predicted by electro-mechanical modeling and measured by micro-Raman spectroscopy using the phonon stress coefficients.…”

Thermal Transport in Superlattice Castellated Field Effect Transistors

“…where Δω is the phonon frequency change, ω 0 is the phonon frequency at T = 0 K, A and B are empirical constants, ℏ is the reduced Planck's constant, k b is the Boltzmann constant and T is the temperature [8]. More details on Raman thermography, including the empirical constants used, can be found in [9]. To determine the heat distribution in the devices 3D T-CAD simulations were performed using Silvaco Atlas.…”

“…As shown in Table 1, at 5.7 W/mm of power dissipation the finite element simulations suggest a temperature increase due to the buffer of 54°C, 47% of the overall temperature rise. Replacing the AlGaN with GaN and inputting a typical GaN/SiC thermal boundary resistance of 16 m 2 K/GW reduced the buffer temperature drop to 28°C, and the ΔT C by 19% [9], [14]. If it is required to maintain the buffer specifications to preserve the electrical characteristics of the devices, then replacing the SiC substrate with a polycrystalline diamond substrate with assumed thermal conductivity of 1500 W/m.K has been shown to reduce thermal resistances by as much as 36% in GaN HEMTs.…”