A Recent Progress of Spintronics Devices for Integrated Circuit Applications

Abstract

Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

Exploration of highly correlated Co‐based quaternary Heusler alloys for spintronics and thermoelectric applications

“…1 These materials exhibit distinctive characteristics in the vicinity of Fermi level, depicting metallic character in one of the spin channels while insulating or semiconducting behavior in other spin direction. These materials are being extensively scrutinized due to their possible applications in spintronics, magnetic tunnel junctions, magnetic random access memories, and other spin dependent devices.…”

“…These materials are being extensively scrutinized due to their possible applications in spintronics, magnetic tunnel junctions, magnetic random access memories, and other spin dependent devices. 1 These materials exhibit distinctive characteristics in the vicinity of Fermi level, depicting metallic character in one of the spin channels while insulating or semiconducting behavior in other spin direction. The band gap in one of the spin channels results in 100% spin polarization in the vicinity of Fermi level.…”

Exploration of electronic structure, mechanical stability, magnetism, and thermophysical properties of L21structured Co2XSb (X = Sc and Ti) ferromagnets

“…6,7 Thus, the spin-based electronics are predictable to convey effective developments especially in the fields like information technology (mostly in spin torque transfer and memory devices). 8,9 HMF delivers 100% spin polarization presumed to promote the competence of spin-based instruments. 10,11 High thermoelectric efficient materials have become an interesting area for the researchers because of providing dynamic applications typically in a waste heat recovery system.…”

“…Among the half‐metallic ferromagnetic (HMF) are such materials which are being predictable by the investigators deliver broader applications typically in thermoelectrics and spintronics . Thus, the spin‐based electronics are predictable to convey effective developments especially in the fields like information technology (mostly in spin torque transfer and memory devices) . HMF delivers 100% spin polarization presumed to promote the competence of spin‐based instruments .…”

On hysteresis based random number generation

“…Spintronics based devices are playing a prominent role in a wide-range of electronic 2 and low-power applications, especially owing to their success in Nonvolatile (NV) memory applications. 3 Spin based devices have also enabled new quantum computing and information processing techniques not feasible with more conventional charge based technologies. Especially, the integration of spintronics devices into integrated circuits opens the possibility for many other important applications of current technological interest.…”