A reaction-transport model for AlGaN MOVPE growth

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

“…Important surface reactions, related to the decomposition of growth limiting species [13] and diffusion, intensified at 1200 o C, contribute to the thorough merging of these growth features accommodating a flat surface with a root-mean-square (rms) roughness of 0.12 nm over an area of 5x5 µm 2 ( Fig. 1(b)).…”

GaN Based Ultraviolet Photodetectors

“…However, the parasitic reaction of TMAl and NH 3 occurring in the vapor phase is much more serious than that of TMGa and NH 3 (Mihopoulos et al, 1998), and it has an important influence on the growth of AlGaN materials. We will discuss parasitic reaction of TMAl and NH 3 in MOCVD and study how to reduce its effect in this section (Zhao et al, 2006b).…”

“…It is known that there is a boundary layer above the substrate in the reaction chamber, and the gas precursors have a residence time in the MOCVD process. The process related to parasitic reaction of TMAl and NH 3 in the vapor phase can be described as follows (Mihopoulos et al, 1998),…”

“…Al ( During the growth, the AlN particles formed by parasitic reaction according to the equation (4) and (5) are carried away from the deposition zone and do not contribute to the growth (Mihopoulos et al, 1998). It is reported that the dimers ( i.e.…”

“…It is reported that the dimers ( i.e. [Al(CH 3 ) 2 .NH 2 ] 2 ) have sufficient energy to lose methyl groups to form AlN particles at high temperature (Mihopoulos et al, 1998). Therefore, if parasitic reaction plays an important role, much more AlN particles will be engendered with the increase of growth temperature, and the growth rate of AlN will decrease.…”