A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology

Gromov, V.; Annema, Anne-Johan; Kluit, R.; Visschers, J.L.; Timmer, P.

doi:10.1109/tns.2007.910170

Cited by 57 publications

(29 citation statements)

References 27 publications

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“…A flux of high energetic charged particles and gammas leads to total ionization dose (TID) effects in MOS transistors [5]. Radiation creates, inside the oxide, free electron-hole pairs and the holes can be trapped at the interface between SiO 2 and Si.…”

Section: Enclosed Layout Vs Conventional Diodementioning

confidence: 99%

“…Deep sub-micron technology are inherently highly tolerant to radiation, mainly due to the reduced oxide thickness [4]. Recombination of the radiation-induced charges is favoured by quantum tunnelling [5]. In a BandGap reference circuit it is possible to neglect the contribution of the radiation effects of transistors on the output voltage by a proper sizing.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, surrounding the diode's p + diffusion with thin oxide (instead of shallow trench isolation field oxide -STI), it is possible to avoid the TID (Total Ionization Dose) radiation effects. This technique is called enclosed layout [5][7] [8]. A resistive voltage divider has been inserted in the main circuit of the BandGap to allows the use of an operational amplifier (opamp) with the input stage of type PMOS.…”

Section: Introductionmentioning

confidence: 99%

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A 65nm CMOS technology radiation-hard bandgap reference circuit

Vergine

Michelis

Matteis

et al. 2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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This paper presents a BandGap reference circuit with low sensitivity to temperature and to the voltage supply variations. It has been designed to be Radiation-Hard up to 1 GRad. This voltage reference has been developed in a commercial 65nm CMOS technology with 1.2 V of nominal voltage supply. A current-mode architecture has been chosen to allow the lowvoltage operation. Particular attention has been dedicated to circuit radiation hardness, in order to provide a stable voltage signal also with high radiation levels, like that of high-energy physics experiments. One of the advantages of CMOS scalingdown process is that the effects, due to radiation exposure, steadily decrease making circuits more and more robust. It follows that, in a conventional BandGap circuit, the most critical aspect could regard the diodes, or in general, the sensing elements. This design has been preceded by a series of measurements of two different sensing device in order to use that with the better radiation hardness .The BandGap reference circuit has been simulated with temperature range from -10 o C to 50 o C. The output value is around 330 mV with a curvature error of 0.05% in nominal conditions. The maximum output deviation in the absolute value is about ±1.1% and ±1.6% under process and mismatch respectively. The integrated noise from 0.01 Hz to 100 MHz is about 180 µV and the power consumption is 240µW. The radiation effects have been simulated modifying the models of devices according to measurements. In this case, thanks to a proper sizing, the output voltage shift is of a few millivolts.

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Section: Enclosed Layout Vs Conventional Diodementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A 65nm CMOS technology radiation-hard bandgap reference circuit

Vergine

Michelis

Matteis

et al. 2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

View full text Add to dashboard Cite

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“…A previously reported radiation-hardened bandgap reference based on dynamic-threshold-voltage MOSFET diodes (DTMOS) was proposed in [7] to solve the diodes leakage problem. It replaces the traditional CMOS diodes by DTMOS diodes, which have better radiation hardness.…”

Section: Radiation-hardened Bandgap References a Dynamic Base Lmentioning

confidence: 99%

A 4.5 MGy TID-Tolerant CMOS Bandgap Reference Circuit Using a Dynamic Base Leakage Compensation Technique

Cao

Cock

Steyaert

et al. 2013

IEEE Trans. Nucl. Sci.

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Abstract-The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited by the radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 µm CMOS technology. A temperature coefficient of 15 ppm/• C from -40• C is measured before irradiation. The voltage variation from 0• C to 100• C is only ±1 mV for an output voltage of 600 mV. Gamma irradiation assessment proves that the bandgap reference is tolerant to a total ionizing dose of at least 4.5 MGy. The output reference voltage exhibits a variation of less than 3% during the entire experiment, when the chip is irradiated by gamma ray at a dose rate of 27 kGy/h.

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“…The reference voltage is required to be stabilized over supply voltage and temperature variations, and also to be implemented without modification of the fabrication process [8,9,11,14]. High-performance internal power supplies and reference voltages are usually needed in high power applications with wide supply voltage range, such as LED drivers and automotive electronics [15][16][17].…”

Section: Introductionmentioning

confidence: 99%