A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz

Brown, E. R.; Parker, C. D.; Calawa, A. R.; Manfra, Michael J.; Molvar, K.M.

doi:10.1109/22.231671

Cited by 6 publications

(4 citation statements)

References 10 publications

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“…In other words, the forward biasing of the Au/Cu 2 O arm make the n-InSe/p-Cu 2 O reverse biased. 28 As some of the duties of tunneling diodes is to behave as a switch and as amplifier, 29 as oscillator, 30 as a logic memory storage device, 31 and as a high frequency component. 32 We attempted to record the capacitance and conductance spectra for the InSe/Cu 2 O diodes.…”

Section: Resultsmentioning

confidence: 99%

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Qasrawi

Kmail

2020

Micro & Optical Tech Letters

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In the current study, we have considered the induced phase transitions in Al/InSe thin film substrates and employing them for fabrication of InSe/Cu 2 O tunneling channels. The InSe substrates are observed to prefer the transition from the hexagonal γ-In 2 Se 3 to the rarely observed tetragonal InSe. The phase transitions are obtained by the thermally assisted diffusion of aluminum, which was already kept at 250 C in a vacuum media of 10 −5 mbar before the compensation of InSe. The tetragonal InSe also induced the crystallization of orthorhombic Cu 2 O with acceptable level of lattice matching along the a-axis. The Al/InSe/Cu 2 O/Au heterojunctions, which are electrically analyzed are observed to exhibit rectifying features with the current conduction being dominated by electric fields assisted thermionic emission (tunneling) through a barrier of width of 5.5 to 14.0 nm and barrier height of 0.19 to 0.30 eV. The ac analyses of the capacitance and conductance spectra of this device have shown that it can exhibit high/low capacitance and frequency dependent conductance switching modes at 0.12 GHz in addition to negative capacitance effect in the range of 0.12 to 1.80 GHz. The features of the device are promising as they indicate the suitability of the device for fabrication of field effect transistors, memory devices, and ultrafast switches.

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Section: Resultsmentioning

confidence: 99%

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Qasrawi

Kmail

2020

Micro & Optical Tech Letters

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“…Substituting (4) and 5in (2) and 3and applying the principle of harmonic balance under the slowly varying amplitude and phase approximation, we obtain (6) and 7where and are the upper-side and lower-side locking bands, respectively, of the slave laser. Here (8) and (9) The AM index and the PM index of the output lightwave from the locked laser are numerically calculated and plotted in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…Theoretically, an output power of 50 W was predicted at a frequency of 750 GHz from an InAs SBV diode tripler assuming an input power of 6 mW at 250 GHz. Resonant-tunneling diode (RTD) [3], [4] and impact ionization avalanche transit time (IM-PATT) diode form another class of oscillators capable of generating submillimeter waves. However, IMPATT diodes have higher intrinsic noise and a wider linewidth of the output wave.…”

Section: Introductionmentioning

confidence: 99%

Submillimeter wave generation through optical four-wave mixing using injection-locked semiconductor lasers

Chattopadhyay

Bhattacharya

2002

J. Lightwave Technol.

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This paper presents a comprehensive analysis of submillimeter wave generation through optical four-wave mixing (FWM) in an injection-locked semiconductor laser. The probe wave introduces pump-probe difference frequency amplitude modulation (AM) and phase modulation (PM) of the slave laser injection locked to the pump wave. The AM and PM indexes of the locked laser output lightwave modulated at the submillimeter wave frequency have been calculated. The submillimeter wave power generated through this technique has also been calculated theoretically. The analysis predicts a submillimeter wave power of 3.7 dBm at 300-GHz frequency for a free-running slave laser output power of 30 mW. In the presence of amplitude modulation of the probe wave, the same modulation is transferred to the submillimeter wave. The suppression of output lightwave amplitude noise relative to the pump, probe, or free-running slave laser amplitude noise has also been estimated in this analysis. At a submillimeter wave frequency of 300 GHz and a probe power equal to the pump power, typical amplitude noise reduction occurs by 7 dB.

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“…Resonant tunneling diode (RTD) is one of electronic devices may be used to build millimetrewave and submillimetrewave sources. For example, RF power of -15.5 dBm (28 μW) was measured at 290 GHz [8], and the highest power of -7 dBm (200 μW)at 100 GHz and at 443 GHz, respectively [9], [10]. Trigger circuits employing fast switching have been realized up to 110 GHz [5], waveguide oscillators were realised up to 712 GHz [6] and planar oscillators have been reported up to 1 THz [7].…”

Section: Introductionmentioning

confidence: 99%

Output Power Analysis and Simulations of Resonant Tunneling Diode Based Oscillators

Wang

2012

Communications in Computer and Information Science

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Negative differential resistance (NDR) devices such as Esaki tunnel diodes (TD), Gunn diodes and resonant tunneling diodes (RTD) are excellent in the realization of high frequency oscillators. However, for tunnel diodes and RTDs, which have large negative differential conductance, the output power tends to be low due to the DC instability, parasitic oscillations and the small area devices employed. In this paper, the maximum device areas for different NDR oscillator topologies, such as waveguide topology and planar topology, were calculated. The result shows that NDR devices for planar oscillators can be much larger (ranging from 3 to 1600 times) than those could be used in waveguide oscillators. A derivation of the maximum RF output power of a parallel RTD oscillator circuit is given and the simulations show that ~1 mW output power could be achieved at 800 GHz for a single diode oscillator.

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A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz

Cited by 6 publications

References 10 publications

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Submillimeter wave generation through optical four-wave mixing using injection-locked semiconductor lasers

Output Power Analysis and Simulations of Resonant Tunneling Diode Based Oscillators

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A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz

Cited by 6 publications

References 10 publications

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu2O pn tunneling devices

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu2O pn tunneling devices

Submillimeter wave generation through optical four-wave mixing using injection-locked semiconductor lasers

Output Power Analysis and Simulations of Resonant Tunneling Diode Based Oscillators

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Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu₂O pn tunneling devices