Submillimeter wave generation through optical four-wave mixing using injection-locked semiconductor lasers

Abstract

This paper presents a comprehensive analysis of submillimeter wave generation through optical four-wave mixing (FWM) in an injection-locked semiconductor laser. The probe wave introduces pump-probe difference frequency amplitude modulation (AM) and phase modulation (PM) of the slave laser injection locked to the pump wave. The AM and PM indexes of the locked laser output lightwave modulated at the submillimeter wave frequency have been calculated. The submillimeter wave power generated through this technique has also been calculated theoretically. The analysis predicts a submillimeter wave power of 3.7 dBm at 300-GHz frequency for a free-running slave laser output power of 30 mW. In the presence of amplitude modulation of the probe wave, the same modulation is transferred to the submillimeter wave. The suppression of output lightwave amplitude noise relative to the pump, probe, or free-running slave laser amplitude noise has also been estimated in this analysis. At a submillimeter wave frequency of 300 GHz and a probe power equal to the pump power, typical amplitude noise reduction occurs by 7 dB.

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

“…Amongst them, modulation format transparent wavelength conversion, submillimetre wave generation, and optical signal processing are of largest importance. 1,2 FWM is driven by the third order optical susceptibility v (3) (Ref. 3) as already observed in semiconductor optical amplifiers (SOA), whose large linear gain is advantageous to generate high power beat-products for weak pump and signal. 4,5 Another approach can be obtained via distributed feedback lasers (DFB), where the lasing mode acts as a pump.…”

“…Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 lm T. Sadeev, 1,a) H. Huang, 2 D. Arsenijević, 1 K. Schires, 2 F. Grillot, 2,3 and D. Bimberg 1 This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of À18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain v (3) /g 0 of $4 Â 10 À19 m 3 /V 3 are measured for 1490 lm long quantum-dash lasers.…”

Total Harmonic Modulation Distortion of an Injection-Locked Fabry-Perot Laser Diode Directly Modulated by a Multi-harmonic RF Signal

“…The transformation of second harmonic IM distortion in an IM-DD fiber optic link has been studied by the author [6]. Depending upon the availability of the RF modulation source, we have measured the total harmonic distortion (THD) of the RF source itself and of the injectionlocked Fabry-Perot (FP) slave laser diode (SLD) directly modulated by a distorted modulating signal under low-level optical injection [7][8][9][10][11][12][13]. The RF source operates in the range of 100 MHz-400 MHz.…”

“…Let av i average phase error of the locked SLD. Substituting (6), (8),(10) and (15) in(11) and applying the Principle of Harmonic balance we get,…”

Studying the nonlinear dynamic characteristics of an optically injection vertical-cavity surface-emitting laser

“…External optical injection technique is widely used to reduce noise, enhance the bandwidth of modulation, and improve coherence property of semiconductor lasers [1][2][3] . Meantime, this technique has been proven to be an effective method to study the nonlinear dynamics of the semiconductor laser.…”