A protective layer on the active layer of Al‐Zn‐Sn‐O thin‐film transistors for transparent AMOLEDs

Abstract

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an Al 2 O 3 protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in O 2 and with water vapor PLs, but the bias stability of the TFTs annealed in O 2 and with water vapor PLs was excellent.

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

“…The optimized plasma treatment time and T-ALD process temperature can match the degree of defect generation and passivation, which provides excellent electrical performance by minimizing the density of defects at the interface. When PE-ALD is used for GI deposition, the amount of H is insufficient to passivate the defects at the interface, 48 so it is difficult to ensure reliability of the device.…”

Stabilities of amorphous indium gallium zinc oxide thin films under light illumination with various wavelengths and intensities

“…Recently, amorphous oxide semiconductors (AOSs) have attracted much attention because these materials can be used as active channels in thin-film transistors (TFTs). [1][2][3][4][5][6][7][8][9][10] They have several merits compared to amorphous silicon TFTs, such as their direct wide-band gap, good transparency, and higher mobility. 11,12) Their high mobility is attributed to the ionic bonding nature of Zn-based oxides.…”