Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Abstract

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

“…The change in band-edge states for all three samples was analyzed by the deconvolution of the epsilon2 spectra into two separate band-edge states: deep band-edge state (D1) and shallow band-edge state (D2) below the conduction band. 9,15,19 The area ratio of D1 for pristine, gel-based, and purified GITZO are 28.34, 17.39, and 22.37%, respectively, and 71.66, 82.61, and 77.63% for D2. The D1 ratio significantly reduces from 28.34 to 17.39%, consequently increasing the density of the D2 ratio from 71.66 to 82.61% by gel-derived GITZO precursor.…”

“…Slight VTH shifts in the negative direction and higher ON current of the gel-derived GITZO TFT are due to the energy level of D2 being close to the conduction band compared to the pristine one. 9,19 According to the percolation conduction, the shallow donor states can contribute to the increase of mobility. 9,15,19 Less D1 states are responsible for electron-trap states during PBTS, leading to the negligible Δ V TH shift in GITZO TFT by the gel-derived precursor solution.…”

“… 9,19 According to the percolation conduction, the shallow donor states can contribute to the increase of mobility. 9,15,19 Less D1 states are responsible for electron-trap states during PBTS, leading to the negligible Δ V TH shift in GITZO TFT by the gel-derived precursor solution. 19 Fig.…”

An immunosensor based on a high performance dual-gate oxide semiconductor thin-film transistor for rapid detection of SARS-CoV-2

“…The high stability of the DG TFTs seems to result from the defect passivation by the hydrogen supply from the Al 2 O 3 or SiO 2 layers to the interface between insulators and the active channel layer during post-annealing. 12…”

“…Oxide semiconductors are promising candidates for materials of the active channel layer of thin-film transistors (TFTs) owing to their ultra-low leakage current, high electron mobility, excellent electrical stability, scalability, and easy processing. 12,13 Owing to their excellent electrical properties, oxide semiconductors are being actively developed not only for switching and driving transistors, but also as sensing materials in gas detectors and phototransistors for sensor applications. 14–16 In addition, TFTs with dual-gate (DG) structures can detect pH, biochemicals, and pressure by means of signal amplification through the capacitive coupling with the sensing region isolated from the TFT device.…”