In the present work, the passive oxidation kinetics of silicon nitride α-Si 3 N 4 and (α+β)-Si 3 N 4 powders at different temperatures from 1000 to 1200 °C were evaluated. Oxidation of these powders was carried out to improve wettability and pressureless in ltration of AZ91E Mg-alloy. The oxidation kinetic constant (k p ) values and oxide layer depth were calculated. The oxidation kinetic constants k p , were 9.11e -16 and 6.35e -16 kg 2 /m 4 s and the oxidation depth were 4.25 nm and 3.69 nm, for α-Si 3 N 4 and (α+β)-Si 3 N 4 , respectively. Furthermore, passive surface oxidation of silicon nitride was performed in order to achieve a nity between silicon nitride and AZ91E magnesium alloy. Therefore, the manufacture of AZ91E/Si 3 N 4 magnesium matrix composite materials was successfully achieved by spontaneous in ltration process at a temperature of 800 °C.
HighlightsChanges in passive oxidation kinetics of silicon nitride were identify by the β-Si 3 N 4 presence in the Si 3 N 4 powders.The SiO 2 amorphous coating produced by passive oxidation on the silicon nitride surface reduce the contact angle between Si 3 N 4 and AZ91E magnesium alloy.Passive oxidation of silicon nitride improves the wettability between Si 3 N 4 and AZ91E magnesium alloy.