A Precision Dose Control Circuit for Maskless E-Beam Lithography With Massively Parallel Vertically Aligned Carbon Nanofibers

Nanomanufacturing: A Perspective

“…will cause the emission characteristics for the individual tips to diverge from one another. Feedback control to remedy this problem is possible in principle, 177,178 but has so far proven to be extremely difficult to implement in practice. Similar considerations apply to many forms of scanning probe lithography, 179 where attempts at parallelization are frustrated by, for example, tip wear.…”

“…will cause the emission characteristics for the individual tips to diverge from one another. Feedback control to remedy this problem is possible in principle, , but has so far proven to be extremely difficult to implement in practice. Similar considerations apply to many forms of scanning probe lithography, where attempts at parallelization are frustrated by, for example, tip wear. , A notable exception to this is dip-pen nanolithography , and its variants, , which, through its ability to directly pattern different types of chemistries, including biological ones, , targets and satisfies a set of constraints different from those relevant to IC device fabrication.…”

Real-time dose control for electron-beam lithography

“…For masks produced using electron-beam lithography (EBL), the local CDU and LER is limited by dose variation due to shot noise, the interaction of electrons with the resist [21][22][23][24][25], and resist homogeneity [26]. Previous efforts to address the dose variation have been focused on the e-beam source [27][28][29][30][31][32][33][34][35][36][37]; however, these techniques failed to account for the statistical nature of electron arrival. Utilizing the information collected from the sample to control the e-beam dose has been implemented in e-beam-induced fabrication using a scanning transmission electron microscope (STEM) [38].…”