A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET

Kumar, Prashanth; Bhowmick, Brinda

doi:10.1002/jnm.2320

Cited by 20 publications

(7 citation statements)

References 26 publications

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“…2 Bandgap narrowing, mobility effect, and thermionic emission current are incorporated using the Schottky-Read-Hall recombination model, and the bandgap narrowing, Lombardi, and thermionic emission models. 16,17 As for the proposed device, the DG-SBTFET, an assessment of numerical simulation has been performed by TFET and conventional devices. The calibrated graphs are shown in Fig.…”

Section: Simulation Setupmentioning

confidence: 99%

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Shalini,

Kumar

2023

ECS J. Solid State Sci. Technol.

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A novel structure of double gate Schottky barrier tunnel field effect transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances, cut-off frequency, transit time, gain bandwidth product, transconductance generation factor, and transconductance frequency product. Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed DG-SBTFETis suitable for low-power and high-frequency applications.

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Section: Simulation Setupmentioning

confidence: 99%

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Shalini,

Kumar

2023

ECS J. Solid State Sci. Technol.

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“…During this period, the channel current i ch is also governed by (6). Hence the drain current id expression is changed to (10) and the rest of the circuit equations are the same as the stage 4 and the state equations are shown in Appendix A Equation (A8). During this period, the switching loss E sw is given by (30) and (31).…”

Section: Stage 8 [T8-t9] Voltage Rising Time IImentioning

confidence: 99%

“…Based on the knowledge of semiconductor physics and microelectronics, the physical model solves the characteristic expression of power devices by conducting the finite element analysis (FEA) [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs

Zeng

Liu

2020

Applied Sciences

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This paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power devices and the stray inductances of the Printed Circuit Board (PCB) traces into consideration. The state equations derived from the equivalent circuit of each stage is solved by iteration to calculate the loss in the switching transients. In order to study the temperature characteristic completely, the key parameters needed in the calculation are extracted from power device test platform based on Agilent B1505A. The loss assessment of the proposed analytical model with varied elements has been successfully substantiated by the experimental results of a 400-V, 15-A double-pulse-test bench. Finally, some practical knowledge about loss mechanisms is given to help estimate the power losses and optimize the efficiency of power converters.

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“…To overcome this problem, people try to form source/drain (S/D) regions with metals to replace doping based abrupt junctions. The price is the formation of the Schottky barrier between metal S/D and semiconductor; therefore, the device is called Schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET). − It should be noted that the Schottky barrier (SB) is not designed as a feature that helps to improve the device characteristics but as a last resort. The conduction types of SB-MOSFET are decided by the SB heights formed on the interface between the S/D metal material and the semiconductor region.…”

Section: Introductionmentioning

confidence: 99%

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

Liu,

Li,

et al. 2023

ACS Appl. Electron. Mater.

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In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher I on–I off ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.

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A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET

Cited by 20 publications

References 26 publications

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

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