IEEE Trans. Power Electron.
 2022
DOI: 10.1109/tpel.2022.3161678
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A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching

Huaping Jiang
1
,
Xiaowei Qi
2
,
Guanqun Qiu
3
et al.
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Cited by 18 publications
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References 16 publications
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Online Monitoring Method for SiC MOSFET Gate Oxide Degradation Based on Gate Voltage Filtering

Liu,
Yao,
Wei
et al. 2024
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Online Monitoring Method for SiC MOSFET Gate Oxide Degradation Based on Gate Voltage Filtering

Liu,
Yao,
Wei
et al. 2024
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress

Gómez,
García-Meré,
Rodríguez
et al. 2024
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Development of a Computational Fluid Dynamics Model to Evaluate the Thermal Resistance of a SiC Power Module Under Several Operating Condition

Donetti,
Sitta,
Mauromicale
et al. 2024
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and
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