A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning

Singh, Abhay Pratap; Mishra, Vimal Kumar; Akhter, Shamim

doi:10.1007/s12633-023-02541-0

Cited by 5 publications

(2 citation statements)

References 110 publications

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“…The unrelenting evolution of increasingly complex 3D transistor structures, as well as the enormous progress of advanced IC fabrication technologies, such as those that have enabled the commercial manufacture of FinFETs, has inspired the emergence of other innovative Gate-All-Around (GAA) device structures, such as nanowire FETs and lately vertically stacked NanoSheet MOSFETs [1], [2] as a promising strategy to further IC component miniaturization [3].…”

Section: Introductionmentioning

confidence: 99%

Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs

Ortiz-Conde,

Silva,

Veloso

et al. 2024

JICS

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We present a critical assessment and discussion of the presence of parasitic source-and-drain series resistance and normal electric field-dependent mobility degradation in undoped Si nanosheet MOSFETs. A simple explicit Lambert W function-based closed-form model, continuously valid from sub-threshold to strong conduction, was used to clearly describe the transfer characteristics. The model was applied to experimental vertically stacked GAA undoped Si nanosheet MOSFETs using phenomenon-related model parameter values extracted from measured data through suitable numerical optimization procedures. The conducted analysis reveals and explains how these two effects produce analogous deleterious consequences on these devices’ transfer characteristics.

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Section: Introductionmentioning

confidence: 99%

Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs

Ortiz-Conde,

Silva,

Veloso

et al. 2024

JICS

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show abstract

“…Nanowires (NWs) have gained significant attention due to their applications in high-performance devices across various fields, including nanoelectromechanical systems (NEMS) [1], nanoelectronics [2,3], energy harvesting [4], and electromechanical/biochemical sensors [5,6]. Silicon (Si) NWs have been extensively utilized in various applications, including NEMS for mass spectrometers [7], gate-all-around transistors [8], and photodetectors/solar cells [9]. As the size of Si NWs decreases, the surface contribution becomes more significant, leading to a sizedependence in the mechanical behavior of the NWs [10].…”

Section: Introductionmentioning

confidence: 99%