Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs
Adelmo Ortiz-Conde,
Vanessa C. P. Silva,
Anabela Veloso
et al.
Abstract:We present a critical assessment and discussion of the presence of parasitic source-and-drain series resistance and normal electric field-dependent mobility degradation in undoped Si nanosheet MOSFETs. A simple explicit Lambert W function-based closed-form model, continuously valid from sub-threshold to strong conduction, was used to clearly describe the transfer characteristics. The model was applied to experimental vertically stacked GAA undoped Si nanosheet MOSFETs using phenomenon-related model parameter v… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.