A Packaged Noise-Canceling High-Gain Wideband Low Noise Amplifier

Regulagadda, Sesha Sairam; Sahoo, Bibhu Datta; Dutta, Ashudeb; Varma, K. Yoganand; Rao, V. Sambasiva

doi:10.1109/tcsii.2018.2828781

Cited by 22 publications

(20 citation statements)

References 13 publications

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“…6c, the small-signal equivalent model for the noise- cancellation network is shown. The voltage gain of noisecancellation network is calculated from (16). The voltage gain of noise-cancellation network is calculated from (16) where, r o3 and r o4 are the channel length modulation resistance of transistor M 3 and M 4 , respectively.…”

Section: Gain Analysismentioning

confidence: 99%

Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques

Hayati

Daryabari

Zarghami

2020

IET Circuits, Devices & Systems

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In this paper, a low power ultra-wideband (UWB) low noise amplifier (LNA) with high and flat voltage gain is proposed using CS-CG noise-cancellation and dual resonance network techniques based on TSMC 180 nm technology. The CS-CG noise cancellation technique reduced the noise figure in 3-10.6 GHz frequency band, and the dual resonance network technique is applied to reach an acceptable input matching. In order to reduce the number of inductors, the active inductor is used in the noise cancellation stage. Also, to control voltage gain and input return loss, a resistor is connected in parallel to channel length modulation resistance of the transistor in the first stage. The developed LNA circuit provides a high and flat voltage gain of 12.75 dB with 0.65 dB variation, which is the result of using two stages common-source topology. An average noise figure of 2 dB, with its maximum value of 2.3 dB, an IIP3 of −8 dBm are obtained from 3 to 10.6 GHz, respectively. The obtained input and output matching value are better than −10 dB. The layout of proposed LNA occupies an area of 0.55 mm2 including ring pad and this structure consumes 11.56 mW from 1-V dc supply.

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Section: Gain Analysismentioning

confidence: 99%

Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques

Hayati

Daryabari

Zarghami

2020

IET Circuits, Devices & Systems

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“…The amplified noise signal and main signal are out of phase, such that the noise present in amplified main signal is canceled. Noise cancelation is appropriate for both single‐ended and differential‐ended configurations …”

Section: Noise Reduction Techniquesmentioning

confidence: 99%

“…Current reuse technique is generally employed to lessen the power consumption. It has reduced the power consumption by sharing the bias current or utilizing the current from feedback transistor.…”

Section: Power Reduction Techniquesmentioning

confidence: 99%

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Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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“…Here, the number of elephants in the clan C i is denoted as n C i , and the dimension 'd' falls between '1' and the total dimension 'D'. Equations (12)- (14) are used for clan updating operation. As mentioned in the behaviour of elephants, male elephants move away from the clan and live separately.…”

Section: Design Optimisation Using Eho Algorithmmentioning

confidence: 99%

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

Roobert¹,

Rani²,

Rajaram³

2019

IET Circuits, Devices & Systems

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This study deals with the design and optimisation of two-stage complementary metal oxide semiconductor low noise amplifier (LNA) for wireless local area network (WLAN) applications. IEEE 802.11n WLAN standard provides up to 600 Mbps speed with 40 MHz channel bandwidth and high throughput. The receiver of these WLAN applications requires LNA with higher gain and minimum noise figure (NF). Elephant Herding Optimisation technique was involved for the first time to optimise the performance of the LNA. The post-layout simulation shows that a maximum gain of 26.7 dB at 2.4 GHz is achieved in the proposed design. Feedforward noise cancelation technique is involved to get a reduced NF of 1.12 dB. The first and second stages are tuned to cover the 3 dB maximum gain bandwidth of 3.2 GHz (from 1.7 to 4.4 GHz). This LNA is designed at 90 nm technology with the supply voltage of 0.5 and 1.2 V, and consumes 8.9 mW of power. Current reuse technology is used to reduce power consumption. The input and output return losses have been found to be −18 and −15 dB, respectively at the targeted 2.4 GHz frequency. Third-order input intercept point of the optimised LNA is −8.1 dBm.

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A Packaged Noise-Canceling High-Gain Wideband Low Noise Amplifier

Cited by 22 publications

References 13 publications

Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques

Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques

Survey on parameter optimization of mobile communication band low noise amplifier design

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

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