A novel WOx-based memristor with a Ti nano-island array

Overview of Memristor-Based Neural Network Design and Applications

“…Figure 2 lists the elements that have been reported to have RS characteristics in binary oxides. The reported binary oxide materials used in RS layers such as silicon oxide (SiO 2 ) [31], titanium oxide (TiO 2 ) [32], vanadium oxide (VO 2 ) [33], zirconium oxide (ZrO 2 ) [34], nickel oxide (NiO) [35], zinc oxide (ZnO) [36], hafnium oxide (HfO 2 ) [37], tantalum oxide (Ta 2 O 5 ) [38], and alumina (Al 2 O 3 ) [39] are WOx-based memristor materials [40] with good switching characteristics. Some exhibit low variability and low power operability.…”

“…Metals used for the electrodes are in blue [41]. [39], and tungsten oxide (WO x ) based materials [40], which exhibit good switching characteristics, low variability and low power operability. Moreover, by using different combinations of electrodes and dielectrics, memristors with mutation and gradient abilities can be realized, making them suitable for various applications from binary or multilevel storage memories to artificial synapses.…”

Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

“…In order to effectively store and process large amounts of information in the era of big data, continuous efforts have been made to improve memory performance to achieve high-speed operation, low energy consumption, nonvolatility, and high-density integration. − Next-generation memory should have nonvolatility and fast read/write speeds like static random access memory (SRAM) and can overcome the large storage performance gap between different levels of memory like flash memory. Among the next-generation memory technology candidates, including phase change random access memory (PCRAM), magnetoresistive random access memory (MRAM), resistance random access memory (RRAM), and ferroelectric tunnel junction (FTJ), RRAM based on the memristive effect has unique advantages. , Various materials have been found to be suitable as active layers in memristors, including metal oxides, metal sulfides, perovskites, two-dimensional (2D) materials, biomaterials, and organic materials. − Among them, memristors based on organic materials have drawn much attention due to their low cost, ease of fabrication, good flexibility, and compatibility with wearable devices. − …”

A Modified SiO2-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors

“…Recently, resistance random access memory (RRAM), one of the most promising candidates in emerging memory technologies, has attracted much attention by the silicon microelectronics industry due to several advantages: fast switching response and high scalability in per-bit energy consumption, excellent endurance, and retention during switching operations. − Furthermore, the simple two-terminal design of “metal/solid-electrolyte/metal” is also applied to a 3D stackable high-density data storage architecture . These features make it possible to employ the RRAM for many potential applications, such as computing-in-memory, data storage, and memory logic units. , Different metal oxide materials, including TiO x , , WO x , , NiO, , CuO, Ta 2 O 5 , ZrO, , etc., have extensively been investigated as the solid electrolyte based on the mechanisms of resistive switching (RS) in memory devices. In these devices, RS depends on the redox process and the migration of ionic species, resulting in electronically nanoconfined conducting filaments within the solid electrolyte or lateral homogeneity of functional interfaces. − However, there are still technical and operational requirements to address, for example, high-temperature processes, lower power consumption, reliability, and stability. , Thus, RRAM applications to advanced electronic systems still require improved materials and device architectures.…”

“…5 These features make it possible to employ the RRAM for many potential applications, such as computing-in-memory, data storage, and memory logic units. 6,7 Different metal oxide materials, including TiO x , 8,9 WO x , 10,11 NiO, 12,13 CuO, 14 Ta 2 O 5 , 15 ZrO, 16,17 etc., have extensively been investigated as the solid electrolyte based on the mechanisms of resistive switching (RS) in memory devices. In these devices, RS depends on the redox process and the migration of ionic species, resulting in electronically nanoconfined conducting filaments within the solid electrolyte or lateral homogeneity of functional interfaces.…”