A Modified SiO₂-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors

Abstract

Dielectric SiO2 has possible uses as an active layer for emerging memory due to its high on/off ratio and low operation voltage. However, SiO2-based memory that relies on the conducting filament still has limited endurance and stability. Here, we have constructed a passivated layer of SiO2 using Ag-doped SrTiO3, which serves as a Ag ion reservoir for the control of filament formation. It is demonstrated that the modified memristor presents an excellent endurance switching and could stably be operated in an ambient environment for 20 days without visible degradation. Based on the reliable switching, the synaptic functions such as excitatory postsynaptic current, paired-pulse facilitation, transition from short-term memory to long-term memory, and potentiation/depression have also been implemented. Furthermore, a 7 × 7 pixel array made from memristors has successfully mimicked simple learning and forgetting behavior. The experimental results offer an alternative approach for SiO2-based memristors and a possibility to be applied in neuromorphic computing.

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

“…M emristors, featuring high nonlinearity, 1,2 low power consumption, 3,4 and continuously modulated conductance, 5,6 have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. 7−9 Memristive materials include three categories: oxides, 10,11 chalcogenides, 12,13 and organics.…”

“…Memristors, featuring high nonlinearity, , low power consumption, , and continuously modulated conductance, , have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. − Memristive materials include three categories: oxides, , chalcogenides, , and organics. , Oxides compatible with CMOS as the mainstream switching layer have been extensively investigated for decades . In contrast to oxides, organics with tremendous varieties due to the millions of carbon, hydrogen, oxygen, and nitrogen compositions exhibit unique memristive synapse adjustability to faithfully mimic the neurological system’s function. , …”

Light-modulated synaptic plasticity of SrTiO3:Ru/CuAlO2 bilayer based memristors for artificial visual system

“…One of the manifestations of synaptic plasticities is PPF behavior, which means consecutive presynaptic incentive that will cause enlargement of postsynaptic signal; this is crucial to real-time processing/identification of visual information 11,12 . Two successive light-pulses (520 nm, 20 mW/cm 2 , 3 s) with an interval time (Δt) of 200 ms are employed for sample so as to demonstrate the PPF behavior of our ITO/SrTiO 3 :Ru/CuAlO 2 /ITO light-modulated memristor.…”

Ag/HfOx/Pt Unipolar Memristor for High-Efficiency Logic Operation

“…Memristors, an emerging nanoscale electronic device with unique superiority in ultrahigh data storage, − memory logic applications, − and neuromorphic computing, − have been extensively examined by academia and industry. With a suitable permittivity (15–25) and a tunable oxygen vacancy (V o ) distribution, HfO 2 has been extensively investigated as a memristor. − Chen et al reported that the HfO 2 -based memristor exhibited a bipolar resistive switching (BRS) with high cycling endurance (>10 10 cycles), a low SET/RESET voltage (<2.0 V), and a fast response time (<10 ns) .…”

“…In this work, a reliable URS behavior is realized using a simple Ag/HfO x /Pt memristor structure. The memristor displays a retention time of >10 4 s, an ON/OFF ratio of >10 3 , and a good operation voltage. Synergy and competition between the Ag conductive filament formed by redox reaction and the migration of an oxygen vacancy are responsible for the observed URS.…”