Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

Abstract

For organic memristors, non-zero-crossing current−voltage (I− V) curves are often observed, which can be attributed to capacitive effects. If the conversion between the capacitance-dominated state (CDS) and the memristance-dominated state (MDS) can be realized in a controllable manner, more device functions can be obtained. In this work, a two-terminal memristor using a common organic dye, azobenzene (AZB), as the active layer was prepared. It is found that as the applied voltage gradually increases, the device can transition from CDS to MDS. In the low voltage range (<1 V), the device is in CDS, and the capacitance is significantly increased by ∼10 4 compared to the theoretical value. In the high voltage range (>1 V), the device is in MDS, achieving an HRS (high resistance state)/LRS (low resistance state) resistance ratio of ∼10 4 , and the logic operations are achieved. Through the analysis of the I−V curve, energy diagram of the materials, and computer simulation results, the mechanisms of CDS, MDS, and their conversion are proposed. This work provides an in-depth understanding of the working mechanism of organic memristors and demonstrates the potential of AZB-based organic memristors for information storage and logic display applications.

Photoelectric Memristor-Based Machine Vision for Artificial Intelligence Applications

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In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors

“…In 2008, Williams et al established a reliable physical model and reported experimental results to confirm the theory pioneered by Chua . The two-terminal nonvolatile memory devices with resistive switching capability are considered as a memristor, which can maintain the internal resistance state according to the history of the applied voltage. , The resistance states of the memristor can be switched between the high-resistance state (HRS) and the low-resistance state (LRS) under applied voltage. − Subsequently, logic operations based on memristors, artificial synapses, neural networks, and neuromorphic computing have been appeared one after another. − Therefore, the research and application of memristors will have a revolutionary impact in the fields of information, semiconductors, and artificial intelligence.…”

Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

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