A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production

Englhard, M.; Reuters, B.; Michaelis, Frances B.; Behringer, Martin; Sundgren, P.; Klemp, Christoph; Skibitzki, Oliver; Schroeder, Thomas

doi:10.1016/j.mssp.2017.08.029

Cited by 4 publications

(4 citation statements)

References 13 publications

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“…The separation of the epitaxial layer is carried out in a diluted HF acid (20%) at room temperature (figure 2(c)) by stirring with a magnetic stirrer at 250 rpm min −1 . The lift-off time was approximately 11 h. This is a typical ELO time for samples that are not subjected to additional strain-inducing factors, such as an attached weight to the sample edge [1,3]. Etchant temperature, additional hydrophilic substances, and AlAs layer thickness tuning can also influence the lift-off time, and hence a combination of these methods can be applied to accelerate the process presented here [5].…”

Section: Processing Of Thin Film Gaas Solar Cellsmentioning

confidence: 99%

“…Epitaxial lift-off (ELO) is widely used in GaAs-based group III-V semiconductor technology to obtain thin film devices [1][2][3][4][5]. In the ELO process a thin sacrificial layer, typically AlAs, is inserted between the GaAs substrate and the * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the released GaAs substrate can be reused multiple times and allows for a significant reduction in the solar cells' production costs [9][10][11]. The ELO process is used in a variety of other thin film semiconductor optoelectronic devices, such as light emitting diodes, quantum well-based solid-state lasers, and fieldeffect transistors [3,4]. ELO devices offer several advantages, including enhanced heat extraction, hybrid integration of lifted III-V devices on Si and other substrates, and thus open new processing and design possibilities [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Paulauskas

Strazdienė

Šebeka

et al. 2023

Semicond. Sci. Technol.

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The epitaxial GaAs substrate lift-off (ELO) technique is widely used to produce thin film III-V semiconductor optoelectronic devices. However, the HF acid used in this process forbids the incorporation of active AlGaAs device layers with high Al content due to its selective etching. In this work, a new ELO method is presented, which allows for the protection of AlGaAs layers against the HF acid attack. The method is used here to prepare thin film GaAs solar cells containing Al0.85Ga0.15As window layer. We employ a sacrificial GaAs buffer and device perimeter pre-processing that coves the exposed edges with back contact metals and electroplated Cu. A comparison of the epitaxially lifted GaAs solar cells with identical cells prepared by substrate etching demonstrates identical photovoltaic figures of merit and confirms the viability of the AlGaAs protection approach. In addition to applications in thin film photovoltaics, this ELO method can be applied to solid-state lasers and single-photon emitters employing AlGaAs-based Bragg reflectors, among other III-V semiconductor optoelectronic devices.

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Section: Processing Of Thin Film Gaas Solar Cellsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Paulauskas

Strazdienė

Šebeka

et al. 2023

Semicond. Sci. Technol.

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“…While, in many cases, the growth substrate is preserved after the chip fabrication, there are many occasions where the semiconductor layers need to be very thin (from nm to µm scale) and transferred to a different substrate by removing the growth substrate [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , …”

Section: Introductionmentioning

confidence: 99%

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

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Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

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A novel surface polishing method and its fundamental performance in ultra-fine polishing of wafer

Cao

Nie

et al. 2019

Int J Adv Manuf Technol

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A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production

Cited by 4 publications

References 13 publications

Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

A novel surface polishing method and its fundamental performance in ultra-fine polishing of wafer

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