1996
DOI: 10.1016/s0257-8972(96)02968-4
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A novel remote technique for high rate plasma polymerization with radio frequency plasmas

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Cited by 15 publications
(8 citation statements)
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“…This may suggest that the ion‐assisted etching is predominant in this domain, where the ablation process causes a significant reduction of deposition rate. A drop in deposition rate at higher specific energies has also been previously observed for other monomers . In the energy‐sufficient domain the deposition rate levels off and remains relatively constant by the increasing W / F ratios, indicating that the equilibrium between ablation and deposition processes is reached.…”
Section: Resultssupporting
confidence: 72%
See 1 more Smart Citation
“…This may suggest that the ion‐assisted etching is predominant in this domain, where the ablation process causes a significant reduction of deposition rate. A drop in deposition rate at higher specific energies has also been previously observed for other monomers . In the energy‐sufficient domain the deposition rate levels off and remains relatively constant by the increasing W / F ratios, indicating that the equilibrium between ablation and deposition processes is reached.…”
Section: Resultssupporting
confidence: 72%
“…A drop in deposition rate at higher specific energies has also been previously observed for other monomers. [8,39,40] In the energy-sufficient domain the deposition rate levels off and remains relatively constant by the increasing W/F ratios, indicating that the equilibrium between ablation and deposition processes is reached. Influence of plasma polymerisation time on the thickness of ppOD films is shown in Figure 6.…”
Section: Deposition Rate and Film Thicknessmentioning
confidence: 99%
“…These changes in surface chemistry may suggest the predominance of an ablation mechanism which etches the deposited fragments off the surface. Such behaviour is known as competitive ablation and polymerization (CAP) [21] and has also been observed for other plasma polymers deposited at relatively high W/F ratios [48][49][50]. According to the XPS data, it can be concluded that the optimal plasma polymerization of thiophene on silica particles is achieved at a W/F of approximately 0.08 kJ ⋅ cm − 3 , where the maximum concentration of sulfur is obtained on the surface.…”
Section: Influence Of Plasma Polymerization Energy On Surface Chemistrymentioning
confidence: 64%
“…Bei weiter ansteigendem gasfluss nimmt die Rate leicht ab (abhängigkeiten bei p = 600 W und p = 1500 W). Wenn die abscheiderate mit der erhöhung der Durchflussrate linear ansteigt, ist die vorhandene leistung ausreichend, um die angebotene monomermenge umzusetzen, die abscheiderate wird durch die Durchflussrate bestimmt [17] wurden wesentlich höhere abscheideraten erzielt als bisher in der literatur beschrieben [18,19].…”
Section: Abscheidung Der Schichtenunclassified