A novel on chip test method to characterize the creep behavior of metallic layers under heavy ion irradiation

Lapouge, Pierre; Onimus, F.; Vayrette, Renaud; Raskin, Jean‐Pierre; Pardoen, Thomas; Bréchet, Y.

doi:10.1016/j.jnucmat.2016.04.014

Cited by 13 publications

(3 citation statements)

References 48 publications

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“…An alternative approach is to use heavy ions, which better simulate the neutron damage and do not activate the matter, but have an even more limited penetration than light ions. Despite the efforts of few research teams to use miniaturized specimen coupled with heavy ion beams [7,8,9,10,11,12,13,14,15], the access to the underlying irradiation creep mechanisms remains indirect. The in-situ imaging of crystal defects under both straining and heavy ion irradiation inside a TEM can allow for a direct access to the active mechanisms [16].…”

Section: Introductionmentioning

confidence: 99%

In-situ TEM irradiation creep experiment revealing radiation induced dislocation glide in pure copper

et al. 2021

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In-situ straining experiments were performed on pure copper to investigate dislocation motion under heavy ion irradiation at high stress levels. The unpinning of dislocations from irradiation defects followed by glide was observed under irradiation at stress level just below the critical stress for dislocation glide without irradiation. This phenomenon was unraveled for the first time in copper. The dislocation dynamics recorded in-situ was statistically analyzed using digital image processing to determine the pinning lifetime. Quantitative analysis of pinning lifetimes have been performed, suggesting that a cascade related mechanism is operative to explain the fast dislocation glide under irradiation. This work provides a new insight on the irradiation creep deformation at high stress level.

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Section: Introductionmentioning

confidence: 99%

In-situ TEM irradiation creep experiment revealing radiation induced dislocation glide in pure copper

et al. 2021

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“…Our method directly elaborates and enhances the test design and protocol described in Jaddi et al [12], which itself extends the working principle proposed by Hatty et al [11] further elaborated at UCLouvain during the last decade mainly for tensile testing [13][14][15][16][17][18]. The principle of the method is shown in Fig.…”

Section: Introductionmentioning

confidence: 80%

“…Figure 3 summarizes the fabrication flow with the specific implementation for the testing of SiO 2 cracked specimens. The process was inspired from the previous applications made with the UCLouvain onchip test method [12][13][14][15][16][17][18] but with some changes. For instance, the test specimen material SiO 2 in the present work is deposited here before the actuator material contrary to the previous works [12][13][14][15][16][17][18].…”

Section: Fabrication Of Crack-on-chip For Sio 2 Film Testingmentioning

confidence: 99%

On-chip environmentally assisted cracking in thin freestanding SiO2 films

Jaddi

Raskin²,

Pardoen

2021

Journal of Materials Research

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An on-chip fracture mechanics method is extended to characterize subcritical crack growth in submicron freestanding films. The method relies on a self-actuated concept based on MEMS fabrication principles. The configuration consists of a notched specimen attached to actuator beams involving high internal stress. Upon release, a crack initiates at the notch, propagates, and arrests. Several improvements are worked out to limit the mode III component and to avoid crack kinking. The method is applied to subcritical crack growth in 140-nm-thick SiO2 films under different humidity conditions. The data reduction scheme relates crack growth rate to stress intensity factor. The static fracture toughness value is ~ 0.73 MPa $$\sqrt{\mathrm{m}}$$ m , with standard error of 0.01 MPa $$\sqrt{\mathrm{m}}$$ m and standard deviation of 0.17 MPa $$\sqrt{\mathrm{m}}.$$ m . Subcritical crack growth rates are much smaller than in bulk specimens. A major advantage is that many test samples can be simultaneously monitored while avoiding any external equipment. Graphic Abstract

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