International audienceAlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors

In-situ straining experiments were performed on pure copper to investigate dislocation motion under heavy ion irradiation at high stress levels. The unpinning of dislocations from irradiation defects followed by glide was observed under irradiation at stress level just below the critical stress for dislocation glide without irradiation. This phenomenon was unraveled for the first time in copper. The dislocation dynamics recorded in-situ was statistically analyzed using digital image processing to determine the pinning lifetime. Quantitative analysis of pinning lifetimes have been performed, suggesting that a cascade related mechanism is operative to explain the fast dislocation glide under irradiation. This work provides a new insight on the irradiation creep deformation at high stress level.