A novel method to grow large CuInS2 single crystals

Solution growth of by the temperature difference method under controlled S vapor pressure

“…Especially, In-rich alloy including CuInS 2 is expected as a material for efficient solar cells. Many growth techniques have been reported to grow bulk CuInS 2 and CuGa 1Àx In x S 2 thus far; the traveling heater method [1][2][3], the sintering method [4], the gradient freeze technique [5], the sulfurization horizontal Bridgman method [6], and the hot-press method [7]. However, it is difficult to control the stoichiometry and to grow bulk crystals with high crystalline quality.…”

Synthesis of Nanocrystalline CuMS2 (M = In or Ga) through a Solvothermal Process

“…CuMS 2 sulfides are tetrahedrally coordinated semiconductors and possess the uniaxial chalcopyrite structure. , Among them, CuInS 2 is a good candidate for photovoltaic applications because its band gap (about 1.53 eV at room temperature) matches well the solar spectrum, and CuGaS 2 is a promising material for the production of light-emitting devices in the green light region because of its wide and direct energy gap (about 2.49 eV at room temperature) …”

Growth, surface microtopographic and thermal studies of CuInS2

“…The ternary I-III-VI compounds have received much attention because, unlike their binary II-VI analogues, they can be made both, n-and p-type [1,2]. The largest band gap I-III-VI compound having this property is CuInS 2 (E g C1.5 eV at room temperature), which is in the optimum range for terrestrial photovoltaic conversion [3].…”