Solution growth of by the temperature difference method under controlled S vapor pressure

Kato, Takamasa; Omata, Toru; Nakamura, T.; Anno, D.; Nabetani, Yu; Matsumoto, Takashi

doi:10.1016/j.jcrysgro.2004.11.023

Cited by 13 publications

(10 citation statements)

References 14 publications

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“…The CuInS 2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure [6]. The growth temperatures were T g = 850 and 900 ºC and the S vapor pressure was in the range of (1.3−4.0)×10…”

Section: Methodsmentioning

confidence: 99%

Growth of Ge and P codoped p ‐type CuInS₂ bulk crystals

Kato

Yamaguchi

Muranaka

et al. 2009

Phys. Status Solidi (c)

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Codoping of Ge and P into CuInS2 was carried out in order to grow p ‐type CuInS2 bulk crystals reproducibly in the S‐poor alloy composition region. The codoping condition for p ‐type crystal growth was made clear for the growth temperatures of 850 and 900 °C. The electrical and photoluminescence properties of codoped p ‐type crystals were also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

Growth of Ge and P codoped p ‐type CuInS₂ bulk crystals

Kato

Yamaguchi

Muranaka

et al. 2009

Phys. Status Solidi (c)

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“…The CuInS 2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure [4]. Both In as a solvent and an excess amount of polycrystalline CuInS 2 as a source material were charged into the quartz crucible (7 mm in diameter and 7 cm in length).…”

Section: Methodsmentioning

confidence: 99%

Incorporation of P in CuInS ₂ using InP as a p‐type dopant

Kato

Yamaguchi

Nakamura

et al. 2006

Phys. Status Solidi (c)

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We have studied phosphorus doping into CuInS2 using InP as a p‐type dopant. When the charged amount ratio InP/In was in the region of 3.5 × 10–4 ≤ InP/In (mole fraction) ≤ 1.3 × 10–2, p‐type bulk crystals were grown in the S‐poor alloy composition region. The activation energy of the phosphorus acceptor is estimated to be 117 meV from Hall measurement. The hole mobility is about 10 cm2/Vs at 300 K (p ∼ 1 × 1015 cm–3).This low mobility is probably due to the high compensation of S‐vacancy donors. The donor‐acceptor pair emission associated with phosphorus acceptors was observed in phosphorus doped CuInS2. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The growth and characterization of Cu(In,Ga)S 2 bulk crystals have already been reported by some researchers [20][21][22][23][24][25][26][27][28]. Yamamoto and Miyauchi et al reported crystallographic evaluation of Cu(In,Ga)S 2 grown by the solution growth method using In as a solvent [20].…”

Section: Introductionmentioning

confidence: 99%