2005
DOI: 10.1016/j.jcrysgro.2004.11.023
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Solution growth of by the temperature difference method under controlled S vapor pressure

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Cited by 13 publications
(10 citation statements)
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“…The CuInS 2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure [6]. The growth temperatures were T g = 850 and 900 ºC and the S vapor pressure was in the range of (1.3−4.0)×10…”
Section: Methodsmentioning
confidence: 99%
“…The CuInS 2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure [6]. The growth temperatures were T g = 850 and 900 ºC and the S vapor pressure was in the range of (1.3−4.0)×10…”
Section: Methodsmentioning
confidence: 99%
“…The CuInS 2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure [4]. Both In as a solvent and an excess amount of polycrystalline CuInS 2 as a source material were charged into the quartz crucible (7 mm in diameter and 7 cm in length).…”
Section: Methodsmentioning
confidence: 99%
“…The growth and characterization of Cu(In,Ga)S 2 bulk crystals have already been reported by some researchers [20][21][22][23][24][25][26][27][28]. Yamamoto and Miyauchi et al reported crystallographic evaluation of Cu(In,Ga)S 2 grown by the solution growth method using In as a solvent [20].…”
Section: Introductionmentioning
confidence: 99%