Incorporation of P in CuInS ₂ using InP as a p‐type dopant

Abstract

We have studied phosphorus doping into CuInS2 using InP as a p‐type dopant. When the charged amount ratio InP/In was in the region of 3.5 × 10–4 ≤ InP/In (mole fraction) ≤ 1.3 × 10–2, p‐type bulk crystals were grown in the S‐poor alloy composition region. The activation energy of the phosphorus acceptor is estimated to be 117 meV from Hall measurement. The hole mobility is about 10 cm2/Vs at 300 K (p ∼ 1 × 1015 cm–3).This low mobility is probably due to the high compensation of S‐vacancy donors. The donor‐acceptor pair emission associated with phosphorus acceptors was observed in phosphorus doped CuInS2. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

First principle investigations of structural, electronic, and optical properties of N‐ and Sn‐doped MgSiP 2

“…In some of the earlier studies on chalcopyrites, Sn atom has been used as a dopant to tune their bandgap, which improves the optoelectronic properties of chalcopyrites 22–24 . Similarly, it is also reported that the doping of V‐group elements (N, P) in chalcopyrites compounds changes the electronic properties of the chalcopyrite compounds 25–27 . This has motivated us to perform a systematic investigation on the structural, electronic, and optical properties of Sn and N doped mono and co‐doped MgSiP 2 to find the effect of doping on optoelectronic properties of compounds.…”

Growth of Ge and P codoped p ‐type CuInS2 bulk crystals

“…This increase in hole concentration with the InP/In indicates that the codoping of Ge and P is effective for the control of the hole concentration in the S-poor alloy composition region. The increase in the hole concentration with charged InP/In was not so clear in the previous experiment with only P doping [4]. Hole concentrations of the samples grown at T g =850 ºC are slightly higher than those grown at 900 ºC.…”

“…We show the plausible impurity energy level diagram in Fig. 6 from this PL study and a previous PL and Hall measurements study on P doped CuInS 2 [4] in order to explain these PL spectral behaviour on the Ge and P codoping. We reported that the acceptor level of P is about 115 meV.…”

“…There are few reports concerning p-type doping in the growth of CuInS 2 bulk crystals or conversion to p-type from n-type crystals by a thermal or an electron beam annealing [2,3]. We reported that the p-type CuInS 2 could be grown in the S-poor alloy composition region by using InP as a dopant in the previous paper [4]. The reproducibility is, however, not so good and some crystals maintain the ntype conductivity in spite of the P-doping.…”

Passivation principle of deep-level defects: a study of SnZn defects in kesterites for high-efficient solar cells

“…Previous experiments have found that phosphorus (P) incorporation greatly increases the V oc of CdTe and enhances the p-type conductivity of CuInS 2 . 22,23 This shows that anion doping can be used to improve the photovoltaic properties of chalcogenide semiconductors. To date, nding a strategy to passivate point defects is urgently needed and of general signicance, thus providing a substantial solution to eliminating the deep-levels and bandtail states of Sn Zn related defects for overcoming the efficiency bottleneck of kesterite solar cells.…”