1993
DOI: 10.1109/66.238180
|View full text |Cite
|
Sign up to set email alerts
|

A novel laser direct write technique for fabrication of thin film MICs

Abstract: Fig. 5. Loadingiunloading scheme diagramWhen the loader-unloader moves close enough to the carrier. the coils are energized and the electromagnetic fields generated by the coils attract the permanent magnets and pull the clips apart to permit the wafer to fit between the clips. Next, the loader-unloader lowers the wafer onto the carrier. Then the vacuum pump and coils are tumed off. The solenoid currents are tumed off gradually to let the clips gently begin to hold the wafer on the carrier. T o complete the lo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2000
2000
2004
2004

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…1,2 LDW is potentially attractive in semiconductor device customization, repair, prototyping, and packaging applications. [3][4][5] Copper is an important metallization material in microelectronic circuits 6,7 and multichip module interconnections, 8,9 largely because of its low electrical resistivity. A major limitation of LDW technologies for device metallization applications using laser chemical vapor deposition (LCVD) techniques has been the lack of Cu precursors with sufficiently high vapor pressure.…”
mentioning
confidence: 99%
“…1,2 LDW is potentially attractive in semiconductor device customization, repair, prototyping, and packaging applications. [3][4][5] Copper is an important metallization material in microelectronic circuits 6,7 and multichip module interconnections, 8,9 largely because of its low electrical resistivity. A major limitation of LDW technologies for device metallization applications using laser chemical vapor deposition (LCVD) techniques has been the lack of Cu precursors with sufficiently high vapor pressure.…”
mentioning
confidence: 99%