A novel Injection Enhanced Floating Emitter (IEFE) IGBT structure improving the ruggedness against short-circuit and thermal destruction

Bhojani, Riteshkumar; Lutz, Josef; Baburske, Roman; Schulze, Hans‐Joachim; Niedemostheide, F.-J.

doi:10.23919/ispsd.2017.7988939

Cited by 6 publications

(10 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, simply increasing the p ‐emitter dose would, of course, result in higher switching losses. Therefore, recently, the injection enhanced floating emitter (IEFE) concept [34] has been suggested to improve the short‐circuit ruggedness.…”

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

“… Schematic of an IGBT provided with the IEFE structure near the anode side [34] (left) and schematic vertical cross sections of the electric‐field distribution (right) for a reference IGBT1 and an IEFE IGBT2 at the same DC‐link voltage …”

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

“…Consequently, the negative space‐charge in front of the

n^{-} - n

junction is reduced. It was shown [34] that the short‐circuit current at which anode‐side current filaments appear can be increased by nearly a factor three without increasing turn‐off losses compared with a standard reference IGBT structure. The IEFE concept can be combined either with a conventionally doped FS or an FS based on hydrogen‐related donors.…”

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

“…Schematic of an IGBT provided with the IEFE structure near the anode side[34] (left) and schematic vertical cross sections of the electricfield distribution (right) for a reference IGBT1 and an IEFE IGBT2 at the same DC-link voltage Fig. 10 Calculated inverter output current for 1200 V IGBT5 & IGBT4 at a maximum junction temperature of 175°C and 150°C, respectively.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

View full text Add to dashboard Cite

Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly

show abstract

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

“…Consequently, the negative space‐charge in front of the

n^{-} - n

Section: Advanced Concepts For Improved Ruggednessmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…A new IEFE IGBT structure, which suppresses the formation of current filamentation at the collector side and offers improved SC robustness has been demonstrated for the 1200 V class with simplified IGBT structure by TCAD simulation [8].…”

Section: Introductionmentioning

confidence: 99%

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

Self Cite

View full text Add to dashboard Cite

In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the collector-side without affecting the static and dynamic losses of the device.

show abstract