Destructive Mechanisms in Power Devices

Lutz, Josef; Schlangenotto, Heinrich; Scheuermann, Uwe; Doncker, Rik W. De

doi:10.1007/978-3-319-70917-8_13

Cited by 4 publications

(3 citation statements)

References 50 publications

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“…Catastrophic failures happen in short time periods, which range from microto milliseconds. Root causes of such failures are semiconductor-die related abnormal events, which include among others overvoltage, overcurrent, short circuit, unclamped inductive switching and overtemperature [3]. Moreover, single event effects such as cosmic radiation induced failure happens when the device is hit by energetic particles during the off state, and concentrated amounts of charge are deposited which enables current flowing [4].…”

Section: Introductionmentioning

confidence: 99%

Thermal Stress Reduction of Power MOSFET with Dynamic Gate Voltage Control and Circulation Current Injection in Electric Drive Application

et al. 2020

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While operating an electric drive under different load conditions, power switch devices experience thermal stress which provokes wear-out failures and compromises lifetime. In this paper, a model-based dynamic gate voltage control strategy is proposed to reduce the thermal stress by shaping the profile of conduction losses. Thermal stability criteria are investigated, which limit the gate voltage operating range; thus, current focalization and associated local heat up are avoided. After that, simulations and lifetime estimation are conducted for performance evaluation in two different operation scenarios, which show promising results at high speed operation conditions. Furthermore, a current injection method is applied for low-speed operating conditions to improve the compensation effort. This method is experimentally verified by using a custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric drive is prototyped, on which power cycling tests are conducted. The junction temperature is measured and the results confirm the thermal control method.

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Section: Introductionmentioning

confidence: 99%

Thermal Stress Reduction of Power MOSFET with Dynamic Gate Voltage Control and Circulation Current Injection in Electric Drive Application

et al. 2020

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“…Environmental impact factors affecting lifetime are cosmic radiation, humidity, mechanical vibration, and temperature. For these impact factors accelerated lifetime tests are well established [1]. In many applications the important impact factor on lifetime of IGBTpower-modules is the operating junction temperature of the semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

“…Content may change prior to final publication. N A e (1) The parameters of the activation energy a E , A and α are defined in [1] for the LESIT lifetime model, B k is the "Boltzmann"-constant. Fig.…”

Section: Introductionmentioning

confidence: 99%

Junction Temperature Control System to Increase the Lifetime of IGBT-Power-Modules in Synchronous Motor Drives Without Affecting Torque and Speed

Wölfle

Nitzsche

Ruthardt

et al. 2020

IEEE Open J. Power Electron.

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Load changes of electrical machines driven by inverters cause temperature swings of the semiconductor devices in IGBT modules of the inverters. These temperature swings lead to mechanical strain in the different material layers of the IGBTpower-modules and limit the numbers of cycles to failure and therefore reduce the lifetime of the IGBTs. This paper presents a temperature control system which is paralleled to the standard torque control system. It aims to reduce the magnitude of temperature swings of the semiconductor devices of IGBT modules caused by load changes of an interior permanent magnet synchronous machine. The principle method is, to increase the temperature of the semiconductor devices of the IGBTmodules by creating higher power losses during low load conditions of the machine without affecting torque and speed. This reduces the magnitude of the load induced temperature swings of the semiconductor devices of IGBT-modules and increases its lifetime at the cost of increased power losses. Three variables have been identified that influence the power losses in inverter modules without necessarily affecting the output power of the permanent synchronous machine. These variables are switching frequency of the inverter, length of the clamping area when a discontinuous modulation is applied and the reactive component of the inverter current. The influence of each variable which regards to the losses in the IGBT-power-modules is explained and the related control methodology is described. As the influence on each of the three variables has its advantages and disadvantages, the proposed temperature control system is designed to influence all three variables concurrently for most effective reduction of the magnitude of temperature swings in the IGBT. While the proposed temperature control system is described in this paper for a two-level threephase inverter feeding an interior permanent synchronous machine, its principle may be applied to other converter topologies. The analytic results have been verified by experimental results obtained from a test set up with a 1200 V/300 A three-phase inverter supplying a 70 kW interior permanent magnet synchronous machine coupled to a 30 kW asynchronous load machine.

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SiCReliability Aspects

Lutz

Basler

2021

Wide Bandgap Semiconductors for Power Electronics

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Destructive Mechanisms in Power Devices

Cited by 4 publications

References 50 publications

Thermal Stress Reduction of Power MOSFET with Dynamic Gate Voltage Control and Circulation Current Injection in Electric Drive Application

Thermal Stress Reduction of Power MOSFET with Dynamic Gate Voltage Control and Circulation Current Injection in Electric Drive Application

Junction Temperature Control System to Increase the Lifetime of IGBT-Power-Modules in Synchronous Motor Drives Without Affecting Torque and Speed

SiCReliability Aspects

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