A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor–Capacitor Structure in 0.18 µm Complementary Metal–Oxide–Semiconductor Technology for Millimeter-Wave Applications

Abstract

A low-insertion-loss V-band complementary metal–oxide–semiconductor (CMOS) band-pass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (ωz1) and the high-frequency transmission-zero (ωz2) can be tuned individually by adjusting the value of the series capacitor (C s) and the size of the built-in inductor–capacitor (LC) resonator, respectively. The folded short-stub technique is used to reduce the chip size of the filter. To reduce the silicon substrate loss, the CMOS-process-compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, the filter achieves insertion-loss (1/S 21) lower than 3 dB over the frequency range of 46.5–85.5 GHz. The minimum insertion-loss is -1.8 dB at 60 GHz.

De-embedding of On-Chip Inductor at Millimeter-Wave Range

“…Meanwhile, unlike low frequency circuit design, in millimeter-wave circuit design, the passive components, especially on-chip inductor plays more and more important role. [10][11][12][13] Hence, if the deembedding of inductor is not done attentively, not only the device model, but also the circuit design will be incorrect and failed. 14,15) Unfortunately, almost all previous literatures of on-wafer de-embedding method are about active devices.…”