A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field-Effect Transistor

Tirkey, Sukeshni; Sharma, Dheeraj; Raad, Bhagwan Ram; Yadav, Dharmendra Singh

doi:10.1109/ted.2017.2766262

Cited by 30 publications

(18 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further, RF parameters of gain bandwidth product (GBP), cut-off frequency ( f t ), transit time (τ), and transconductance frequency product (TFP) are analyzed. The GBP determines the maximum working frequency for a direct current gain of 10, and the formula of GBP is g m / 20πC gd , [15,22] where g m is the transconductance. f t is the frequency at which the shortcircuit current gain is unity, a criterion that is important for the quantification of the TFET performance in high-speed digital applications.…”

Section: Parasitic Capacitance and Radio-frequency Performance For Nd...mentioning

confidence: 99%

“…f t is the frequency at which the shortcircuit current gain is unity, a criterion that is important for the quantification of the TFET performance in high-speed digital applications. The f t is defined as g m / 2π C gd +C gs , [15,22] where C gs is the gate-source capacitance. Figures 9(a) and 9(b) show that the NDMCG TFET with 10 nm of L 3 exhibits high GBP and f t due to the reduced parasitic capacitance and enhanced transconductance.…”

Section: Parasitic Capacitance and Radio-frequency Performance For Nd...mentioning

confidence: 99%

“…Up to now, many techniques have been proposed to improve I on , such as narrow bandgap materials, [7][8][9][10][11] high-k gate dielectric, [12] hetero-junction mechanism, [13,14] and doping-less TFETs, [15] source-side pocket doping, [16] hetero-stacked TFET, [17] heteromaterial gate, [18,19] etc. The I amb can be reduced by using the dual-material control-gate (DMCG) TFETs, [20] charge plasma-based TFETs with gate engineering, [21,22] gate material workfunction engineering, [23] lightly doped drain, [24] and gate-drain underlap structure. [25,26] Moreover, a hetero-gatedielectric (HGD) TFET with a high gate-oxide dielectric near the source side and a low gate-oxide dielectric near the drain side can enhance I on and obtain promising radio frequency performance.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance*

Xu¹,

Cui²,

Sun³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

A tunnel field-effect transistor (TFET) is proposed by combining various advantages together, such as non-uniform gate–oxide layer, hetero-gate-dielectric (HGD), and dual-material control-gate (DMCG) technology. The effects of the length of non-uniform gate–oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency, transit time, and transconductance frequency product. Moreover, the length of non-uniform gate–oxide layer and dual-material control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.

show abstract

Section: Parasitic Capacitance and Radio-frequency Performance For Nd...mentioning

confidence: 99%

Section: Parasitic Capacitance and Radio-frequency Performance For Nd...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance*

Xu¹,

Cui²,

Sun³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Mesh size near B2B tunneling interface is set to 1×10 −4 µm and mesh size = 5×10 −3 µm far of interface. The nonlocal B2B tunneling model was applied with Newton's numerical method based on iteration (up to 25 iterations) for better convergence of current [4], [17]. Excluding this, to analyze RF functioning, a small signal AC analysis was performed by setting frequency at 1 MHz.…”

Section: Schematic and Specifications Of Designed Devicementioning

confidence: 99%

Design and Investigation of F-shaped Tunnel FET with Enhanced Analog/RF Parameters

Singh

Yadav

2021

Silicon

Self Cite

View full text Add to dashboard Cite

In this manuscript, a novel physically doped single gate F-shaped tunnel FET is simulated and optimized. The designed configuration is well optimized and analyzed for different source thickness, source length, drain length with different lateral tunneling lengths between the source edge and gate dielectric. Also, we optimized some stand-points like threshold voltage, ION to IOF F current ratio, ambipolar conduction range, subthreshold swing and various capacitance to rectify the analog/RF performance of single gate F-shaped TFET. Regarding this, we concurrently optimize the lateral tunneling length between source and gate with optimization of source thickness. The variation in lateral tunneling length, the potential and strength of electric field at fixed Vgs voltage is varied which leads to effective change in the ON-current, average sub-threshold swing, and turn ON-voltage. Another side, as well as the source thickness vary, the electric field variation takes place near the edge of source, which leads to variation in the ON-current and ON-voltage. The performance parameters of single gate F-TFET is compared with single gate L-TFET, which is the incentive of this submitted work. The optimized single gate F-TFET have 0.30 V turn ON-voltage with 7.4 mV/decade average sub-threshold swing and high Ion/I of f ratio approx 10 13 . Besides, a significant reduction in parasitic capacitance is beneficial to enhanced RF performance with better controllability on channel.

show abstract

“…However, performance of MOSFETs severely degrade in the deep micron region due to nonacceptable hurdles such as short channel effects, restriction of 60 mV/dec subthreshold swing (SS) and random dopant fluctuations (RDFs) [2][3][4][5][6]. In this concern, tunnel FET (TFET), which is having SS < 60 mV/ dec because of the band to band tunnelling (BTBT) mechanism for current conduction, is a perfect replacement for MOS devices [7][8][9][10][11][12]. However, RDFs are still a roadblock for doped TFETs to achieve sub-micrometre structures [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

A comparative investigation of low work‐function metal implantation in the oxide region for improving electrostatic characteristics of charge plasma TFET

Aslam

Sharma

Yadav

et al. 2019

Micro & Nano Letters

Self Cite

View full text Add to dashboard Cite

Abruptness at tunnelling junction is a vital issue with doped tunnel field-effect transistor (TFET) to achieve improved electrostatic characteristics. This task is more problematic for charge plasma TFET (CP-TFET) because of large tunnelling barrier at the channel/source interface. In this regard, an effective approach has already been employed through implantation of a horizontal metallic splint (HMS) inside the dielectric region near channel/source joint for improved electrical behaviour of CP-TFET. However, placement of a vertical metal splint (VMS) provides contact for HMS and gate electrode, which gives magnificent analogue/DC characteristics for newer structure. Combination of HMS and VMS (i.e. double metal splint (DMS)) increases electron density at channel/source junction for improved electron tunnelling rate compared with only HMS structure. In this regard, a complete comparative analysis of DMS CP TFET (DMS-CP-TFET) is performed between CP-TFET and HMS-CP-TFET. Furthermore, consequence of length and work-function variation of DMS and HMS on DC/RF parameters is investigated in device optimisation part of this work.

show abstract

A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field-Effect Transistor

Cited by 30 publications

References 27 publications

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance*

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance*

Design and Investigation of F-shaped Tunnel FET with Enhanced Analog/RF Parameters

A comparative investigation of low work‐function metal implantation in the oxide region for improving electrostatic characteristics of charge plasma TFET

Contact Info

Product

Resources

About