A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique

Akbar, M.S.; Choi, Changhwan; Rhee, Se Jong; Krishnan, Sitaraman; Kang, Chang Young; Zhang, M.H.; Lee, T.; Ok, I.; Zhu, Feng; Kim, H.-S.; Lee, J.C.

doi:10.1109/led.2006.888190

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The reliability of hafnium-based oxides such as HfO 2 and HfSiON has been investigated with respect to oxide breakdown (BD) [1], [2]. Weibull slope and lifetime projections have been investigated for both soft BD (SBD) and hard BD (HBD) in HfO 2 dielectric [2].…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Choi

Hong

Baek

et al. 2009

IEEE Electron Device Lett.

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Low-frequency noise (LFN) after channel soft oxide breakdown (SBD) of n-MOSFETs with a HfLaSiO gate dielectric and TaN metal gate shows a Lorentzian-like spectrum, which is not observed in HfSiO gate dielectric devices after channel SBD. This is related to the spatial location of the SBD spot. Because La weakens atomic bonding in the interface layer, the SBD spot is generated close to the Si/SiO 2 interface. This is verified by using time domain analysis. To examine the property of this Lorentzianlike noise, LFNs after channel SBD are measured repeatedly after arbitrary times. After about 20 h, LFN finally shows an increase only at the low-frequency part of the noise spectrum (f < 1 kHz). These results suggest that the trap distribution after arbitrary times spreads instead of remaining localized. Therefore, the traps or the La-O defect clusters have severe unstable distribution and induce an increase of the localized field, which, in turn, causes the traps to percolate through the high-k dielectric.Index Terms-HfLaSiO, Lorentzian-like spectrum, lowfrequency noise (LFN), soft oxide breakdown (SBD), trap distribution.

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Section: Introductionmentioning

confidence: 99%

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Choi

Hong

Baek

et al. 2009

IEEE Electron Device Lett.

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Effect of electric field on defect generation and migration in HfO2

Strand

Cottom

Larcher³

et al. 2020

Phys. Rev. B

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Understanding the effect of electric fields on defect creation and diffusion in metal oxides is of fundamental importance for developing accurate models of oxide degradation in electronic devices and dielectric breakdown. We use the Berry phase operator method within density functional theory to calculate how an applied electric field affects barriers for the creation of oxygen vacancy-interstitial defect pairs (DPs) and diffusion of interstitial O ions in monoclinic (m-)HfO 2. The results demonstrate that even close to breakdown fields, barriers for DP generation exceed 6 eV in the perfect m-HfO 2 lattice. Simulated injection of extra electrons from electrodes significantly lowers barriers for the creation of DPs, which are further reduced by the field to around 1 eV. Thus, bias application facilitates the injection of electrons into the oxide; these extra electrons reduce energy barriers for the creation of O vacancies, and these barriers as well as those for O ion diffusion are further lowered by the field. We find that, within a linear regime, the electric field modulates the barrier height by a dot product between the electric field and the electric dipole at the zero-field transition state to good accuracy.

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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique

Cited by 2 publications

References 4 publications

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Effect of electric field on defect generation and migration in HfO2

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