A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements

Wagner, L.F.; Young, Ralph W.; Sugerman, A.

doi:10.1109/edl.1983.25748

Cited by 159 publications

(75 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The continuous lines, representing an approximation based on TFE theory using Eqs. (6) and (7) lie lower than the measured value of n: We have included a few results presented by other workers in GaAs as well as in Si Schottky diodes for comparison [15,34,40] in Fig. 6(b).…”

Section: à3mentioning

confidence: 95%

“…Þ is also obtained at zero electric field, both of the quantities are the same [6]. Using this relation and F f b0 ¼ F bmean ; the values of s s and F bmean are calculated and are tabulated in Table 2.…”

Section: Effect Of Barrier Height Inhomogeneitymentioning

confidence: 98%

“…Generally, the SBD parameters are determined over a wide range of temperatures and doping concentrations in order to understand the nature of the barrier and the conduction mechanism. Thermionic emission (TE) theory is normally used to extract the SBD parameters [1][2][3][4][5][6][7], however, there have been several reports of certain anomalies [4,[7][8][9] at low temperatures. The ideality factor and barrier height determined from the forward bias current-voltage ðI2VÞ characteristics on the basis of the TE mechanism were found to be a strong function of temperature and doping concentration [5,[9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

View full text Add to dashboard Cite

The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were determined in the doping range of 2.5 Â 10 15 -1 Â 10 18 cm À3 at low temperatures. The thermionic-emission zero-bias barrier height for current transport decreases rapidly at concentrations greater than 1 Â 10 18 cm À3. The ideality factor also increases very rapidly at higher concentration and at lower temperature. The results agree quite well with thermionic field emission (TFE) theory. The doping dependence of the barrier height and the ideality factor were obtained in the concentration range of 2.5 Â 10 15 -1.0 Â 10 18 cm À3 and the results are well described using TFE theory. An excellent match between the homogeneous barrier height and the effective barrier height was observed which supports the good quality of the GaAs film. The observed variation in the zero-bias barrier height and the ideality factor can also be explained in terms of barrier height inhomogeneities in the Schottky diode. r

show abstract

Section: à3mentioning

confidence: 95%

Section: Effect Of Barrier Height Inhomogeneitymentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

View full text Add to dashboard Cite

show abstract

“…The ideality factor n and zero-bias barrier height j bf [7] were found to be 1.6 and 0.77 eV, respectively. This result is in reasonable agreement with the final band bending of DE kt = (+ 0.7 AE 0.1) eV observed by SXPS.…”

Section: Resultsmentioning

confidence: 96%

GaN Cleaning by Ga Deposition, Reduction and Re-Evaporation: An SXPS Study

Maffeïs¹,

Clark

Dunstan

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…The fundamental or flat band barrier height was also calculated using the ideality factor (n) and the effective barrier height (Φ B ), given by the TE model [27]: The electric field in the semiconductor was zero under the flat band condition and the effects of tunneling and image force lowering on the I-V characteristics were negligible. Using Eq.…”

Section: Resultsmentioning

confidence: 99%

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim¹

2016

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

show abstract

A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements

Cited by 159 publications

References 7 publications

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

GaN Cleaning by Ga Deposition, Reduction and Re-Evaporation: An SXPS Study

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Contact Info

Product

Resources

About