A Normally-off AlGaN/GaN Transistor with R&lt;sub&gt;on&lt;/sub&gt;A=2.6m&amp;amp;#x003A9;cm&lt;sup&gt;2&lt;/sup&gt; and BV&lt;sub&gt;ds&lt;/sub&gt;=640V Using Conductivity Modulation

Uemoto, Yasuhiro; Hikita, Masahiro; Ueno, Hideki; Matsuo, Hideaki; Ishida, Hideyuki; Yanagihara, Manabu; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/iedm.2006.346930

Cited by 37 publications

(26 citation statements)

References 8 publications

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“…For power switching applications, the enhancement-mode (E-mode) transistors are highly preferred rather than the depletion-mode (D-mode) devices for the inherent fail-safe operation and simple gate driver circuitry. Despite the various technologies proposed to realize E-mode, GaN HFETs such as p-cap gate [2, 3], fluorine plasma ion implantation [4], and cascode technology [5], the MOSFET with partially or fully recessed gate is considered as a promising candidate because of its high-threshold voltage ( V TH ), large gate swing for improved fail-safe capability [6, 7], and low on-resistance [8]. Moreover, the MOS-gate is compatible with the mainstream gate driver ICs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

et al. 2017

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Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region, one single-level bulk trap (E C-0.53 eV) uniformly distributed in GaN buffer was identified. While in the subthreshold region, the interface traps with continuous energy of E C-0.4~0.57 eV and density of 0.6~1.6 × 1012 cm−2 were extracted from the commonly observed multiple G p/ω peaks. This methodology can be used to investigate the traps in GaN buffer and facilitates making the distinction between bulk and interface traps.

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Section: Introductionmentioning

confidence: 99%

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

et al. 2017

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“…Substantial progress has been made in GaN power devices with the demonstration of off-state breakdown voltages of up to several kV12131415161718192021222324. The highest off-state breakdown voltage of 10.4 kV was achieved in AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire with an on-resistance R on of 186 mΩ·cm 2 25.…”

mentioning

confidence: 99%

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Liu

Wang

et al. 2015

Sci Rep

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Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.

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“…A depletion layer extends from p-n junction formed between the p-GaN and AlGaN barrier layer and depletes the 2-DEG electron, and then the normally-off operation can be obtained [7,8]. In this structure, the gate bias voltage more than GaN p-n built-in potential makes the gate current large.…”

Section: A Lateral Structure Dvicesmentioning

confidence: 96%

GaN for automotive applications

Nishikawa

2013

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than that of Si power devices, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Power modules used in HV/EV system and present status of the GaN power device development are presented. Reliability of the GaN power device was also discussed.

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A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation

Cited by 37 publications

References 8 publications

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

GaN for automotive applications

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