GaN for automotive applications

Abstract

Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than that of Si power devices, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Power modules used in HV/EV system and present status of the GaN power device development are presented. Reliability of the GaN power device was also discussed.

Device physics towards high performance GaN-based power electronics

“…器件单次从关态到开态的转换时间为70 ms, 且在关态下漏压从0 V扫描至200 V的 时间为46 s 裂纹 [32] . (1) 基于栅槽刻蚀(Gate Recess)技术的MIS-HEMT 或Hybrid MOS-HEMT结构 [6,8] . 该技术主要通过减薄 (2) P-(Al)GaN盖帽层结构 [9] .…”

“…(3) F离子注入技术形成MIS-HEMT结构 [3,4,34] . (4) 增强型Si-MOSFET与GaN-HEMT级联结构 [6,8] . 层减薄到只剩下5 nm以下时, 来自栅介质/AlGaN界面 态对2DEG的远程散射越来越严重, 导致沟道迁移率 的急剧降低.…”

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

“…To improve the efficiency of 'green-cars', better performance than Si power devices are required. GaN power devices are promising candidates for satisfying the performance requirements [10,11]. The lateral GaN power device with a blocking voltage of 600 V is suitable for medium power applications at sub systems (such as compressor in air conditioners or battery charging systems) in HEV and EV.…”