A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors

Hsieh, E. R.; Hsueh, Y; Lin, Rui Qi; Huang, Yi; Hou, Pei Jun; Chang, Kai-Shiun; Shen, Ting Ho; Li, Yu Hsien; Lyu, Ruei Yang

doi:10.1109/led.2023.3289179

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A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors

Cited by 2 publications

References 17 publications

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