A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching

Hsueh, Y. L.; Lin, R. Q.; Huang, Y. X.; Lin, Y. H.; Chang, K. H.; Shen, T. H.; Hsieh, E R.; Wong, S. Simon

doi:10.1109/edtm58488.2024.10512294

2024 8th IEEE Electron Devices Technology &Amp;amp; Manufacturing Conference (EDTM) 2024

DOI: 10.1109/edtm58488.2024.10512294

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A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching

Y. L. Hsueh,

R. Q. Lin,

Y. X. Huang

et al.

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A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching

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