A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT

Inoue, Akihisa; Amasuga, Hirotaka; Goto, S.; Kunii, T.; Wong, Mark; Alamo, J.A. del; Oku, Tatsuya; Ishikawa, T.

doi:10.1109/mwsym.2006.249697

Cited by 7 publications

(5 citation statements)

References 4 publications

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“…Both the two curves show the same characteristics. The nonlinear Rd model analysis is fully explained in [7]. In this study, the nonlinear Rd of the former and the developed pHEMT is derived from the IV characteristics of TLMs shown in Fig.…”

Section: Developed Phemt Structurementioning

confidence: 99%

“…For the power performance measurement, we fabricated the one stage amplifier with a gate width of 0.6 mm. For this simulation, we used an HB simulator [7].…”

Section: Large Signal Measurementmentioning

confidence: 99%

“…The overall characteristics (Pout, Gain and PAE) at Lrd of 1.0 tm (solid lines) show significant degradation against those at Lrd of 0.4 tm (broken lines). These results are usually known [7].…”

Section: Large Signal Measurementmentioning

confidence: 99%

“…Previously, we had proposed a new millimeter-wave transistor model, with nonlinear drain resistance (Rd), which coffectly represents the power loss tendency against frequency [7]. This method indicates that the lower the extrinsic Rd attained between gate and drain, the higher the power density at a higher frequency achieved, even with a long Lrd (of about 1.0 gm and more).…”

Section: Introductionmentioning

confidence: 99%

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A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

Amasuga¹,

Inoue²,

Goto³

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave amplifiers, is presented. According to the nonlinear drain resistance model previously proposed, we have adopted a "Stepped Recess" structure, which includes a GaAs buried layer 150 nm thick to reduce the nonlinear drain resistance and a recessed area at the gate side to control the gate leakage current. Consequently, even at the 2.0 gm width of the gate-to-drain separation, the developed pHEMT has showed a high power density of 0.65 W/mm in the Ka band, and high onstate breakdown voltage of over 30 V at once. In addition, the proposed nonlinear drain resistance model effectively explains this power performance.

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Section: Developed Phemt Structurementioning

confidence: 99%

“…For the power performance measurement, we fabricated the one stage amplifier with a gate width of 0.6 mm. For this simulation, we used an HB simulator [7].…”

Section: Large Signal Measurementmentioning

confidence: 99%

Section: Large Signal Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

Amasuga¹,

Inoue²,

Goto³

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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“…However, measured performances of such high power pHEMTs are much poorer than the simulation that includes parasitic losses. The nonlinear drain resistance is found to play important role in this phenomenon In this paper, the power loss problem of the high power pHEMTs is reviewed [2,3]. A nonlinear drain resistance pHEMT model is proposed to describe the power loss problem accurately.…”

Section: Introductionmentioning

confidence: 99%

A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers

Inoue

Amasuga

Goto

et al. 2008

2008 European Microwave Integrated Circuit Conference

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A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement.Comparisons of pHEMTs with different nonlinear Rd also support the model.

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High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications

Amasuga

Shiga

Totsuka

et al. 2008

IEICE Transactions on Electronics

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A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT

Cited by 7 publications

References 4 publications

A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers

High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications

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