A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters

Li, Hong; Zhao, Xingran; Sun, Kai; Zhao, Zhi‐Jun; Cao, Guoen; Zheng, Trillion Q.

doi:10.1109/tpel.2018.2865611

Cited by 44 publications

(35 citation statements)

References 17 publications

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“…Li et al develop a behavioral model that is continuously defined across all operating conditions, avoiding segmentation between domains [10]. These authors also propose a novel approach to model thermal dependence, in which VGS and VDS are scaled and shifted before calculating drain current.…”

Section: Recent Behavioral Modelsmentioning

confidence: 99%

“…The second model selected, referred to as the non-segmented model throughout this discussion, was presented by Li et al in [10]. The non-segmented model is one of the most recent behavioral models published for describing the SiC MOSFET.…”

Section: Models Selected For Trade Studymentioning

confidence: 99%

“…Inclusion of quantitative metrics, such as the root-mean-square (RMS) error of the forward curve prediction, could improve comparisons between models published by independent groups. Additionally, DPT comparisons provide minimal insight into model convergence or run-time for larger applications [10], so models intended for such applications should be evaluated in more complex circuits. This is part of a larger trend in the literature; computational complexity is rarely addressed and is generally limited to qualitative analysis instead of quantitative results.…”

Section: Introduction and Literature Reviewmentioning

confidence: 99%

“…This work is segmented into two primary domains of MOSFET behavior: static and dynamic. This division of behaviors is well established in the literature [2], [10]- [24], and is used to bisect the scope of this research into two manageable domains. As the conduction branch is a necessary, though not sufficient, condition for time domain evaluations, it will be considered first and form the foundation for a complementary publication.…”

Section: Introduction and Literature Reviewmentioning

confidence: 99%

See 3 more Smart Citations

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

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Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC MOSFET models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.

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Section: Recent Behavioral Modelsmentioning

confidence: 99%

Section: Models Selected For Trade Studymentioning

confidence: 99%

Section: Introduction and Literature Reviewmentioning

confidence: 99%

Section: Introduction and Literature Reviewmentioning

confidence: 99%

See 2 more Smart Citations

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

show abstract

“…C gs and C ds are determined by gate-source voltage and drain-source voltage respectively while C gd ane related to both of them. The voltage-controlled capacitors are modeled through a voltagecontrolled voltage source, a normal capacitor, and a currentcontrolled current source [25]. Shown in Fig.…”

Section: Electrothermal Model Of the Hybrid Switchmentioning

confidence: 99%

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

Li¹,

Ning²,

Xu³

et al. 2018

CPSS TPEA

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A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown

Zheng

et al. 2023

Lecture Notes in Electrical Engineering

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A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters

Cited by 44 publications

References 17 publications

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown

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