A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Wong, King-Yuen; Kwan, M.-H.; Yao, F.-W.; Tsai, Ming-Fu; Lin, Y. C.; Chang, Yi-Feng; Chen, P.-C.; Su, R.Y.; Yu, Jingshu; Yang, Fu-Liang; Lansbergen, G. P.; Hsiung, C.-W.; Lai, Yung‐Cheng; Chiu, Kai Ling; Chen, C.F.; Lin, Ming-Chieh; Wu, Haw-Yun; Chiang, Chi‐Lu; Liu, S.-D.; Chiu, H. C.; Liu, P.-C.; Chen, C.-M.; Yu, C.H.; Tsai, C.S.; Wu, Chao-Chi; Lin, B. N.; Chang, Ming Hsung; You, Jaehee; Wang, S.-P.; Chen, L.-C.; Liao, Ying-Yu; Tsai, Leo; Tsai, Tom; Tuan, H.C.; Kalnitsky, A.

doi:10.1109/iedm.2015.7409663

Cited by 46 publications

(19 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Results in [94] and [95] promise a high reliability of GaN devices under hard environmental conditions. Commercially available 650 V devices are qualified according to the JEDEC Solid State Technology Association (JEDEC) tests including 1000 hours of high temperature reverse bias [96].…”

Section: B Reliability and Safetymentioning

confidence: 99%

Discussion on Electric Power Supply Systems for All Electric Aircraft

et al. 2020

View full text Add to dashboard Cite

The electric power supply system is one of the most important research areas within sustainable and energy-efficient aviation for more-and especially all electric aircraft. This paper discusses the history in electrification, current trends with a broad overview of research activities, state of the art of electrification and an initial proposal for a short-range aircraft. It gives an overview of the mission profile, electrical sources, approaches for the electrical distribution system and the required electrical loads. Current research aspects and questions are discussed, including voltage levels, semiconductor technology, topologies and reliability. Because of the importance for safety possible circuit breakers for the proposed concept are also presented and compared, leading to a initial proposal. Additionally, a very broad review of literature and a state of the art discussion of the wiring harness is given, showing that this topic comes with a high number of aspects and requirements. Finally, the conclusion sums up the most important results and gives an outlook on important future research topics. INDEX TERMS Aviation, aerospace electronics, MEA, AEA, electric power supply systems, dc-dc power converters, power semiconductor devices, wide bandgap semiconductors, high voltage direct current (HVDC), circuit breaker, hybrid circuit breaker.

show abstract

Section: B Reliability and Safetymentioning

confidence: 99%

Discussion on Electric Power Supply Systems for All Electric Aircraft

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Several advanced types of AlGaN/GaN FET devices have been explored recently. Among of them, the GaN MOS or MIS (metal-insulator-semiconductor) HEMTs has drawn most of the attention [9,14,28,43], so do the MISHEMTs with high-K gate dielectric [17,31,44]. Other new devices with a regrowth of AlGaN layer [41], or a regrowth of GaN drift channel layer [45] have also been reported.…”

Section: Algan/gan Hemt Devicementioning

confidence: 99%

“…GaN-based HEMTs on silicon substrate are particularly appealing to the IC industry due to its compatibility with the industry-matured Si-CMOS IC technologies. Tremendous research and development work has been conducted and reported in the recent years with significant progresses on GaN-on-Si HEMTs covering the full scope of a new IC-chain, including the industrial acceptable-low defect quality of GaN-on-Si epitaxial materials, the optimized GaN-based HEMT devices and integration [11][12][13][14][15][16][17], the significantly enhanced reliability [18][19][20][21][22][23][24], the comprehensive circuit and device modeling [25][26][27] and the product designs [19,[28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

View full text Add to dashboard Cite

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

show abstract

“…Then, the evolution of the Au-free process flow for CMOS-compatible GaN technology will be illustrated. We will also discuss the new developments in structures and materials used in CMOS-compatible manufacturing processes in ohmic contact formation and gate structures [ 44 , 45 ].…”

Section: Introductionmentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

View full text Add to dashboard Cite

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

show abstract

A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Cited by 46 publications

References 1 publication

Discussion on Electric Power Supply Systems for All Electric Aircraft

Discussion on Electric Power Supply Systems for All Electric Aircraft

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

The Evolution of Manufacturing Technology for GaN Electronic Devices

Contact Info

Product

Resources

About